![STP120N10F4 Allicdata Electronics](https://files.allicdata.com/upload/common/default.jpg)
Allicdata Part #: | STP120N10F4-ND |
Manufacturer Part#: |
STP120N10F4 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 100V TO-220 |
More Detail: | MOSFET N-CH 100V TO-220 |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
FET Type: | -- |
Technology: | -- |
Current - Continuous Drain (Id) @ 25°C: | -- |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | -- |
Vgs(th) (Max) @ Id: | -- |
Vgs (Max): | ±20V |
FET Feature: | -- |
Power Dissipation (Max): | 300W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-220 |
Package / Case: | TO-220-3 |
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STP120N10F4 is a MOSFET (metal-oxide semiconductor field-effect transistor) which belongs to the N-channel enhancement mode MOSFET family. STP120N10F4 is an efficient and reliable component that is used in a variety of applications such as power supplies, motor controllers, DC-DC converters, thyristor switching, and general purpose switching applications.
Working Principle of STP120N10F4 MOSFET
The working principle of STP120N10F4 MOSFET is based on the field effect phenomenon. It is basically a three-terminal device with a drain, gate, and source. The device consists of two P-channel and one N-channel transistors surrounded by N-channel transistors and an oxide layer. This oxide layer isolates the P-channel and N-channel transistors from each other, allowing them to be controlled separately.
When a voltage is applied to the gate terminal, a depletion region is created between the source and drain terminals. This depletion region functions as a switch, allowing or blocking current flow between the source and drain. When the voltage applied to the gate terminal is above the threshold voltage, the depletion region is increased, allowing current to flow freely between the source and drain terminals. When the voltage at the gate terminal is below the threshold voltage, the depletion region is decreased, blocking current from flowing between the source and drain terminals.
Application of STP120N10F4 MOSFET
One of the most common applications of a MOSFET is as a switch, which can be used to control the flow of electricity in a circuit. A MOSFET can be used as a switch because of its ability to control the flow of current between the source and drain terminals. This makes it ideal for controlling the amount of power going to a device, or for turning on or off components in a circuit.
STP120N10F4 offers many advantages over other power semiconductor devices, such as low power consumption, fast switching, and low leakage current. It is a cost-effective and efficient way to control large amounts of power. As such, STP120N10F4 MOSFETs are commonly used in a range of applications such as motor control, automation, lighting, HVAC, and power supplies.
STP120N10F4 is also ideal for low-current applications due to its low gate threshold voltage and low on-resistance. This makes it a great choice for applications that require low-power and low-current switching. It is also used in applications such as computers, telecom equipment, and consumer electronics.
Conclusion
STP120N10F4 is a MOSFET which belongs in the N-channel enhancement mode MOSFET family. The device consists of two N-channel transistors and an oxide layer, which allows the device to be used as a switch. STP120N10F4 is an efficient and reliable component and is used in a variety of applications, including power supplies, motor controllers, DC-DC converters, thyristor switching, and general purpose switching applications. It is also ideal for low-current applications due to its low gate threshold voltage and low on-resistance, making it a great choice for applications that require low-power and low-current switching.
The specific data is subject to PDF, and the above content is for reference
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