STP15N80K5

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STP15N80K5 is a high voltage, high speed power MOSFET that combines excellent performance and low on-state resistance with a wide range of application fields. It is a three-terminal, reduced gate charge (RGC) power MOSFET that is specifically designed for battery operated applications including portable communication equipment. The use of advanced high voltage power MOSFET technologies enables the STP15N80K5 to not only make low on-state resistance available, but also to maintain its outstanding reliability in the high frequency range. In addition, it has been developed to provide a very low capacitance, low gate charge and low input capacitance, making it suitable for use in high frequency switching applications.

The STP15N80K5 features a wide range of capability with a break down voltage of 800 V, drain-source breakdown voltage (BVDSS) of 800 V, continuous drain current (Id) rating of 15 A, and drain-source on-state resistance of 6 mΩ. Furthermore, it has a maximum junction temperature of 175°C. Designed for voltage applications, it also offers low gate charge, and fast switching speeds, making it suitable for battery operated portable applications.

The operation of the STP15N80K5 is based on the MOSFET intrinsic capacitance between the gate and the source. This is a voltage dependent capacitance, determined by the distance between the gate and source and the oxide thickness between the gate and the source. When a voltage is applied to the gate, it creates an electric field (e field). This electric field causes electrons and holes to move into and out of the channel region between the source and drain, creating a depletion layer of n-type material. When a larger voltage is applied to the gate, the electric field will increase and the depletion layer will get bigger, thus allowing more electrons to flow from the source to the drain and resulting in increased conduction.

This device is available in both TO-220 and TO-263 packages, and is suitable for a variety of applications like high power frequency converters, automotive, audio amplifiers, and power inverters. The TO-220 package provides a fast switching, isotropic performance and can be supplied in a solder-reflow compatible package. The TO-263 package also provides a fast switching isotropic performance, but in a surface mount form factor.

The STP15N80K5 offers excellent performance-to-cost ratio, with high performance and reliability that make it suitable for a wide range of applications. The low gate charge and the low on-state resistance offer reduced switching losses combined with increased efficiency, making it an ideal choice for cost sensitive applications. It is also a perfect choice for ultra-high voltage operation up to 800 V. Thus, pairing the STP15N80K5 with the Compact Low VCE2S series of high voltage devices from STMicroelectronics provides designers with a wide range of choices for different applications.

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