
Allicdata Part #: | 497-15557-5-ND |
Manufacturer Part#: |
STP18N65M2 |
Price: | $ 1.68 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 650V 12A TO220 |
More Detail: | N-Channel 650V 12A (Tc) 110W (Tc) Through Hole TO-... |
DataSheet: | ![]() |
Quantity: | 1852 |
1 +: | $ 1.68000 |
10 +: | $ 1.62960 |
100 +: | $ 1.59600 |
1000 +: | $ 1.56240 |
10000 +: | $ 1.51200 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220 |
Mounting Type: | Through Hole |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 110W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 770pF @ 100V |
Vgs (Max): | ±25V |
Gate Charge (Qg) (Max) @ Vgs: | 20nC @ 10V |
Series: | MDmesh™ M2 |
Rds On (Max) @ Id, Vgs: | 330 mOhm @ 6A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 12A (Tc) |
Drain to Source Voltage (Vdss): | 650V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The STP18N65M2 is a MOSFET (Metal Oxide Semiconductor Field Effect Transistor) that is commonly used in various applications. It is a single, N-channel type MOSFET and offers improved RDS(ON) performance when compared to other similar devices. The STP18N65M2 is designed for power switching applications up to 20V.
MOSFETs are a versatile type of transistor which can be utilized in a wide range of electronic applications. MOSFETs can be used for both filtering and amplification, and are typically used in power management and signal switching applications. The STP18N65M2, in particular, is a powerful and reliable option for a wide variety of applications, offering enhanced performance over traditional MOSFETs.
The STP18N65M2 is a N-channel MOSFET, meaning it has an internal source-drain portion and a gate-body terminal connection. N-channel MOSFETs are often used in power integrated circuits such as amplifiers, power transistors, and enhanced signal converters. These devices are ideal for applications that require low voltage but large current handling.
The STP18N65M2 works by using a voltage applied to the gate terminal to control the current through the MOSFET. The gate voltage controls the conductivity of the MOSFET and thus, the current which passes through it. The MOSFET will remain non-conductive and the current will remain blocked until the threshold voltage is reached. At this point, the MOSFET will become conductive and the current will be allowed to flow through it.
In terms of performance, the STP18N65M2 offers much improved performance over traditional MOSFETs. It has a maximum continuous drain-source voltage of 20V, a maximum drain current of 18A, a maximum drain source resistance at 25 degrees Celsius of 0.68 ohms, and a maximum power dissipation of 250W at 25 degrees Celsius. These features make the STP18N65M2 a great choice for applications that require high power processes.
When choosing a MOSFET for an application, it is important to look at the key features of the device as well as the intended application. The STP18N65M2 offers enhanced performance and internal protection features when compared to traditional MOSFETs, making it an excellent choice for power switching applications up to 20V.
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