STP16NK60Z

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

STP16NK60Z is an advanced and highly efficient MOSFET used in the field of power management and suppression. It is part of the STP16NK60Z series which includes products specifically designed for specific applications. This device was developed specifically for use in high-current, high frequency applications and is capable of switching loads of up to 80A and frequencies of up to 25 MHz.

STP16NK60Z offers excellent protection against switching transients, greatly reducing the risk of circuit damages and component fatigue. The device is well-suited to wide variety of applications, including power supplies, motor control, switching regulators and motor controllers, H-Bridge applications, and solar inverters.

The STP16NK60Z power MOSFET has a structure of single-ended N-channel MOSFET. It has a very small signal or a potentially large load current depending on its working conditions. The maximum current carrying capability of the device is 80 amps and it has an RDS (on) feature which specifies the conditions of its efficient working.

The device features low turn-on resistance, fast body diode switching, and an integrated thermally enhanced surface-mount package. It also offers excellent noise immunity and EMI performance, making it ideal for high-frequency switching. The STP16NK60Z can be used in various operating modes with help from external bootstap circuits and developed optimized layouts for such applications.

The transistor\'s method of working lies in the flow of electrons through the N-channel MOSFET. The N-type channel carries electrons across the device, allowing them to flow through the substrate when a suitable gate voltage is provided. The junction between the drain and the source, or between the N-type channel and the substrate, acts as a semiconductor, which when energized, permits an electric current to flow through the device.

The sum of the gate and drain voltages, the drain-source voltage, and the gate-source voltage control the current flow through the device. When the gate-source voltage is increased, the current is increased, and when the voltage is decreased, the current is decreased. This device relies on proper gate-source voltage biasing to ensure proper device performance.

The STP16NK60Z is a great choice for applications that require high current handling and it offers excellent performance and reliability. Its features such as low turn-on resistance, fast body diode switching, and an integrated thermally enhanced surface-mount package, make it ideal for high-frequency switching. Its ability to carry a large load current along with its compatibility with multiple operating modes and external circuits makes it a perfect choice for uses such as power supplies, motor control and H-Bridge applications, and solar inverters.

The specific data is subject to PDF, and the above content is for reference