STP10NK80Z Allicdata Electronics
Allicdata Part #:

497-7498-5-ND

Manufacturer Part#:

STP10NK80Z

Price: $ 2.91
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N-CH 800V 9A TO-220
More Detail: N-Channel 800V 9A (Tc) 190W (Tc) Through Hole TO-2...
DataSheet: STP10NK80Z datasheetSTP10NK80Z Datasheet/PDF
Quantity: 176
1 +: $ 2.91000
10 +: $ 2.82270
100 +: $ 2.76450
1000 +: $ 2.70630
10000 +: $ 2.61900
Stock 176Can Ship Immediately
$ 2.91
Specifications
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 190W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2180pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V
Series: SuperMESH™
Rds On (Max) @ Id, Vgs: 900 mOhm @ 4.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Drain to Source Voltage (Vdss): 800V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The STP10NK80Z is a N-channel power MOSFET transistor from STMicroelectronics, housed in an 8-pin PowerSO-8 package. This device has a drain-source voltage of 650V and a continuous drain current at 25°C of 8A. It is designed for use in high-frequency switching applications such as AC-DC converters. The STP10NK80Z is designed to reduce the amount of power wasted in the MOSFET in the form of heat – pushing operating temperature up to 175°C. It can also operate up to a frequency of 3MHz.

Power MOSFETs are a type of transistor that use metal oxide semiconductor (MOS) technology to amplify and switch electrical signals. A MOSFET is composed of a gate, source and drain, connected by an insulated gate Field-Effect Transistor (FET) structure to provide low-resistance switching. Like other FET transistors, the STP10NK80Z operates by creating an electric field between the gate and the drain, which serves to open and close a connection between the source and the drain.

The advantage of using MOSFETs is that they require less current to operate, allowing for greater control of power consumption. They also tend to be more efficient, as they generate less heat during operation. The MOSFET also has a much higher switching speed compared to other transistor technologies and can be used to amplify high-frequency signals.

The STP10NK80Z MOSFET offers a number of features to benefit high-frequency switching applications. Its low on-resistance (RDS(on)) helps reduce power dissipation, while its high drain-source breakdown voltage, V(BR)DSS, allows for operation in harsh conditions. It has a transistor threshold voltage of 3.5V, allowing for low gate-source voltages, and its fast switching times, low output capacitance, and low gate-charge, Qg, make it suitable for high-frequency switching operations.

The STP10NK80Z is an ideal choice for applications requiring high power output, high switching speeds, and superior EMI noise performance. Its features provide benefits such as low RDS(on), fast switching, low gate charge, high drain source breakdown voltage, and long life, making it suitable for a range of applications in AC-DC, DC-DC, and DC-DC converter circuits. It is also suitable for motor drive applications, such as air conditioning and heating systems, as well as lighting and power supplies.

In summary, the STP10NK80Z is a single N-channel power MOSFET transistor from STMicroelectronics that is housed in an 8-pin PowerSO-8 package. It is designed to reduce power dissipation and provide a low on-resistance, high drain-source breakdown voltage, fast switching times, and low output capacitance. It is suitable for use in a range of high-frequency switching applications and can operate up to a frequency of 3MHz.

The specific data is subject to PDF, and the above content is for reference

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