Allicdata Part #: | STP120NF04-ND |
Manufacturer Part#: |
STP120NF04 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 40V 120A TO-220 |
More Detail: | N-Channel 40V 120A (Tc) 300W (Tc) Through Hole TO-... |
DataSheet: | STP120NF04 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4.5V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 300W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 5100pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 150nC @ 10V |
Series: | STripFET™ II |
Rds On (Max) @ Id, Vgs: | 5 mOhm @ 50A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 120A (Tc) |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The STP120NF04, often referred to as the N-channel MOSFET, is a simple and versatile transistor architecture characterized by its low input and output capacitance. The device is optimized for operation at frequencies up to 3GHz and offers good discharge leakage current and low gate-to-drain capacitance. This transistor can be used in a variety of circuits, such as switching, amplification and logic, and is suitable for high voltages of up to 100 volts.
To understand the working principle of the STP120NF04, we must first understand the basic construction of a MOSFET transistor. The device consists of three terminals, the gate, drain and source, with an oxide-insulated gate region between them. When a voltage is applied to the gate, it produces an electric field which attracts free electrons from the regions near it, forming a conducting channel between the source and the drain. This channel allows current to flow from the drain to the source, or from the source to the drain, depending on the polarity of the voltage applied to the gate.
The STP120NF04 is an enhancement-mode type MOSFET, meaning that the channel between the source and drain will be turned "on" only when the gate-source voltage is greater than the threshold voltage. This type of transistor is commonly used in applications where a low on-resistance is desired, such as switching, high-speed amplifiers, and low-noise amplifiers. Furthermore, the low gate-to-drain capacitance makes it ideal for applications which require high frequency performance, such as RF amplifiers and oscillators.
The STP120NF04 is primarily used in power applications, such as motor control, DC-DC converters and electric vehicles. The device is also used in industrial control systems for applications like power line control and voltage regulator circuits. Furthermore, the transistor is often used in consumer appliances such as TVs, audio amplifiers, and home entertainment systems.
The STP120NF04 provides a range of features that make it an ideal choice for a variety of applications. The device has an extremely low input capacitance which enables the transistor to operate at high frequencies with minimal distortion. The low on-resistance and gate-to-drain capacitance further increase the device’s performance in high-frequency applications. Additionally, the device is designed to withstand high voltages up to 100 V, making it ideal for power applications.
In summary, the STP120NF04 is an N-channel MOSFET transistor that can be used in a variety of applications. Its features, such as low input capacitance, low on-resistance and high voltage capability, make it an ideal choice for motor control, DC-DC converters, industrial controls, and consumer applications.
The specific data is subject to PDF, and the above content is for reference
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