STP10NM65N

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The STP10NM65N is a N-channel Enhancement Mode Power MOSFET transistor that is commonly used in a wide range of applications. This MOSFET is especially suited for applications where low voltage and low source-drain resistance are required. The STP10NM65N features the ability to handle current up to 10A and can be used for applications with operating voltages up to 650V.

The STP10NM65N can be used in a variety of applications such as DC/DC converters, motor drivers and gate drivers. It is also used in applications where a low gate capacitance is desired, such as in DC/DC converters with high switching speeds. Additionally, the STP10NM65N can be used to construct low-noise linear amplifiers and switching regulators.

The STP10NM65N is an N-channel enhancement mode Power MOSFET, meaning that it conducts current using a flow of electrons between the drain and source. These electrons are controlled by a gate terminal which applies a voltage to forward bias the MOSFET. This will create a depletion layer at the drain-source terminal, allowing current to flow through the device. When the gate voltage is reversed, the enhancement mode MOSFET will cut off the current flow.

The STP10NM65N is built using a special structure to reduce losses in the device. It has a very low on-state resistance and can handle up to 10A of continuous drain current. This MOSFET also features a fast recovery diode that helps to reduce switching losses in applications where the device will be turned on and off frequently. Additionally, the STP10NM65N has a wide operating temperature range of -55 to +150°C, allowing it to be used in harsh environments.

In addition to its low on-state resistance and current handling capabilities, the STP10NM65N also has excellent thermal properties. The device has a maximum junction temperature of 175°C, allowing it to operate without the need for external cooling. It also has an exceptionally low RDS(on) of 0.062Ω, allowing it to pass more current compared to other Power MOSFETs.

The STP10NM65N is an ideal choice for applications that require low voltage and low source-drain resistance. It has low on-state resistance and can handle up to 10A of current. The device also has excellent thermal properties, allowing it to operate without external cooling. Furthermore, it has a fast recovery rate, making it an ideal choice for applications that require high switching speeds.

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