STP11NM60FD

Vgs(th) (Max) @ Id:	5V @ 250µA
Package / Case:	TO-220-3
Supplier Device Package:	TO-220AB
Mounting Type:	Through Hole
Operating Temperature:	--
Power Dissipation (Max):	160W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	900pF @ 25V
Vgs (Max):	±30V
Gate Charge (Qg) (Max) @ Vgs:	40nC @ 10V
Series:	FDmesh™
Rds On (Max) @ Id, Vgs:	450 mOhm @ 5.5A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	11A (Tc)
Drain to Source Voltage (Vdss):	600V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

.

STP11NM60FD Application Field And Working Principle

Introduction

The STP11NM60FD is an N-channel insulated gate field-effect power transistor (IGFET), manufactured by STMicroelectronics. This semiconductor device is designed specifically for automotive applications, especially in power electronics applications such as infotainment and engine control units, hence its high reliability. This device has excellent low on-resistance characteristics and logic level control, making it well suited for high-power switching applications.

Application Field

The STP11NM60FD is ideal for increasing the efficiency of power management tasks, making this device suitable for a variety of appliances and automotive applications. It has excellent efficiency when used in a buck regulator application, allowing efficiencies of up to 95% with a minimal space requirement. This makes the STP11NM60FD well suited for the automotive industry. The device also works well for applications such as motor control, battery management, and power converter applications. It has a wide range of operating temperatures and is able to handle high-frequency switching efficiently.

Working Principle

The STP11NM60FD is a field-effect transistor that works on the principle of drain-source rectification. It has two active regions, the source region and the drain region. When the source region is made more positive than the drain region, the transistor becomes conducting and a current flows across the drain and source regions. This current is also known as an inversion current since it is formed when the voltage between the drain and source is reversed. This creates a controlled flow of electrons through the transistor, thus allowing the device to be used as a switch in power applications.The STP11NM60FD has an additional logic-level control (LLC) component which allows it to be used in transistor-based logic switching devices. This allows the device to control the current flow through the device based on the input voltage applied. This functionality is useful for digital applications such as interfacing with other digital devices.

Conclusion

The STP11NM60FD is an N-channel insulated gate field-effect power transistor (IGFET) manufactured by STMicroelectronics. This device is designed specifically for automotive applications and works on the principle of drain-source rectification. This device has a wide range of applications such as motor control, battery management, and power converter applications. It also has a logic-level control component which allows it to be used in transistor-based logic switching devices. This makes the STP11NM60FD a great choice for automotive and power management applications.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description