STP11NM80

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The STP11NM80 is a low voltage, low and medium power n-channel enhancement mode switching power MOSFET from STMicroelectronics. It uses a vertical double-diffused MOSFET (also known as DMOS) process for improved levels of performance. With a low threshold voltage and low capacitance, the STP11NM80 provides excellent low-voltage switching performance at moderate power levels.

The STP11NM80 is primarily used in applications requiring the switching of currents in the range of 0.2A up to 800A. It is suitable for a wide range of applications such as power supply regulation, DC motor control, speed regulation, power regulation, UPS, etc. It is also used as an improved replacement in many existing designs.

The STP11NM80 MOSFET is a single-diffused device, with a common drain and a separate lightly-doped n-channel (source) and a separately-doped p-channel (body-drain) on the top of the chip. This structure is utilised for low-voltage switching and for optimised power management for long power-down times. The input is a single gate, with an immediate response to a gate-flux change and a low gate charge for fast switching speeds. The gate has a small voltage threshold, meaning that lower turn-on and turn-off times are achieved.

The STP11NM80 also features a low ‘on’ resistance and a low reverse transfer capacitance. This allows for extremely low power consumption, improved power efficiency and maximum power dissipation, providing reliable performance even in extreme operating conditions. The device also features overcurrent and thermal protection to ensure safe and reliable operation.

The STP11NM80’s operation is governed by the MOSFET current conduction principle. When the gate is brought to a positive potential, the device is said to be ‘on’ and current can be carried from its drain to its source. When the gate is brought to a negative potential or is left open, the device is said to be ‘off’ and current is not allowed to flow. By controlling the gate voltage, the MOSFET can be used to control current flow across a circuit, making it a very useful device for a variety of power applications.

In sum, the STP11NM80 is a low-voltage, low and medium power MOSFET with excellent levels of performance. Its use of a vertical double-diffused MOSFET process, small voltage threshold, low ‘on’ resistance, low reverse transfer capacitance, and thermal and overcurrent protection, makes it an excellent choice for a wide range of applications. The STP11NM80’s operation is governed by the MOSFET current conduction principle, meaning it can be used to control current flow, making it a very useful device for power applications.

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