STP12N65M5

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When it comes to power-switching in today’s modern technologies, having the proper tool for the job is essential. In order for electronic products to run efficiently, having the perfect transistor is essential. The STP12N65M5 from STMicroelectronics is the ideal solution for creating the perfect balance of power distribution and conversion in consumer electronics. The combination of features and performance offered by this MOSFET makes it a popular choice for many applications.

The STP12N65M5 is a member of the STM-N series, a range of N-MOSFETs which provides a balance between performance and cost. This MOSFET is specifically designed for low threshold and low on-state resistance applications, such as those found in consumer electronics. This device has a maximum drain-source voltage of 650 volts, a maximum continuous drain current of 12 amps, a drain-source on-state resistance (R_DS(on)) of 0.559 ohms, and a maximum gate-source voltage of +/- 20 volts. The combination of these features makes the STP12N65M5 the perfect solution for a variety of low-power-level applications.

The STP12N65M5 features an on-resistance rating of 0.559 ohms that is suitable for high-frequency and low-voltage applications. This low-on-resistance rating enables switching frequencies of up to 1,000 kHz at 10V, with an operating temperature range from -55C to +150C. The combination of performance and cost make this MOSFET an ideal solution for applications that demand both low power distribution and conversion.

In terms of application field, the STP12N65M5 is ideal for a range of low-voltage and low-power applications ranging from motor control to LED lighting. This MOSFET is perfect for applications that require high switching frequencies and high efficiency. It can be used in a variety of applications including auto start/stop systems, small brackets and alternators, solar inverters, and LED lighting or motion sensing applications.

The STP12N65M5 is a feature-rich device and is suitable for many different power conversion and switching applications. It has an on-resistance rating of 0.559 ohms and is capable of handling a maximum drain current of 12 amps. This device offers low on-state resistance and low threshold voltage, which enables high frequency and low voltage applications. Additionally, the MOSFET features a maximum drain-source voltage of 650V and a maximum gate-source voltage of +/- 20 volts, making it suitable for low power distribution and conversion applications.

The working principle of the STP12N65M5 is based on using a metal-oxide semiconductor field-effect transistor (MOSFET). The device operates by utilizing thermal energy to control the flow of electrons between the source and drain terminals. When the gate voltage is applied, a voltage controlled current is generated, and the current flow is controlled by the gate to source voltage, making it easy to control the power output of the device.

In conclusion, the STP12N65M5 offers a perfect balance of performance and cost for a range of applications. The low on-state resistance and high switching frequency make it ideal for low power distribution and conversion applications. This MOSFET is capable of handling a maximum drain current of 12 amps and is suitable for applications such as motor control, solar inverters, and LED lighting or motion sensing applications. The working principle of the device is based on utilizing a MOSFET to control the flow of electrons between the source and drain terminals.

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