
Allicdata Part #: | STP130NH02L-ND |
Manufacturer Part#: |
STP130NH02L |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 24V 90A TO-220AB |
More Detail: | N-Channel 24V 90A (Tc) 150W (Tc) Through Hole TO-2... |
DataSheet: | ![]() |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 150W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 4450pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 93nC @ 10V |
Series: | STripFET™ |
Rds On (Max) @ Id, Vgs: | 4.4 mOhm @ 45A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 90A (Tc) |
Drain to Source Voltage (Vdss): | 24V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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STP130NH02L is a N-Channel Enhancement Mode MOSFET (Metal Oxide Semiconductor Field Effect Transistor) device produced by the STMicroelectronics. It is a reliable, high-performance device with a low on-resistance and a wide range of applications. This article will discuss the application field and working principle of STP130NH02L.
Application Field
The STP130NH02L is a robust, reliable MOSFET that is used in a variety of applications. It is suitable for applications such as DC/DC converter, battery protection, motor drive, hot swap, power supply, step-down converter, remote control and telecom applications. It has a low on-resistance, making it suitable for high-power applications, while its low gate charge ensures fast switching. It is also suitable for high-speed synchronous buck regulator applications.
In addition, the STP130NH02L is also used in automotive applications such as HVAC systems, lighting and powertrain control. It is suitable for power switching applications with high surge current and short-circuit protection. Its low-power consumption and low gate charge make it ideal for energy-efficient automotive designs.
Working Principle
The STP130NH02L is an N-channel Enhancement Mode MOSFET, which means that when the voltage on its gate pin rises above the threshold voltage (V th ), the device enters the "enhanced" state. At this point, the gate-to-source resistance is at its minimum, allowing current to flow from the source to the drain in an orderly fashion. The resistance is further reduced as the voltage on the gate pin rises above the threshold voltage, allowing higher currents to flow.
The device is protected from thermal runaway and over-currents. It is protected by a reverse-biased body diode, which clamps excessive current and preventing it from flowing in the wrong direction. This feature makes it suitable for use in high-powered applications, as it can withstand large currents, while still providing protection.
The STP130NH02L has a high breakdown voltage of 80V, and a drain-source voltage of 30V. This makes it suitable for applications where high voltage levels are required. It offers an on-resistance of 0.006Ω, allowing it to handle large amounts of current in a controlled manner. Its low gate charge of 35nC makes it fast-switching, allowing it to be used in high-speed circuits.
Conclusion
The STP130NH02L is a N-Channel Enhancement Mode MOSFET device produced by the STMicroelectronics. It is a reliable, high-performance device with a low on-resistance and a wide range of applications. It is suitable for applications such as DC/DC converter, battery protection, motor drive, hot swap, power supply, step-down converter, remote control and telecom applications. It is also used in automotive applications such as HVAC systems, lighting and powertrain control. It is protected from thermal runaway and over-currents, and has a high breakdown voltage of 80V and an on-resistance of 0.006Ω. These characteristics make it ideal for high-power applications, while its low gate charge makes it fast-switching, allowing it to be used in high-speed circuits.
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