
Allicdata Part #: | 497-12936-5-ND |
Manufacturer Part#: |
STP15N65M5 |
Price: | $ 2.35 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N CH 650V 11A TO220 |
More Detail: | N-Channel 650V 11A (Tc) 125W (Tc) Through Hole TO-... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | $ 2.35000 |
10 +: | $ 2.27950 |
100 +: | $ 2.23250 |
1000 +: | $ 2.18550 |
10000 +: | $ 2.11500 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220 |
Mounting Type: | Through Hole |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 125W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 810pF @ 100V |
Vgs (Max): | ±25V |
Gate Charge (Qg) (Max) @ Vgs: | 22nC @ 10V |
Series: | MDmesh™ V |
Rds On (Max) @ Id, Vgs: | 340 mOhm @ 5.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 11A (Tc) |
Drain to Source Voltage (Vdss): | 650V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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Introduction
The STP15N65M5 is a planar N-channel power MOSFET that is designed to handle the power requirements of sophisticated electronic devices. It was designed to operate in applications where high power dissipation is needed, and has several features, including: robust ultimate breakdown capability, extremely low threshold voltage and on-resistance. The STP15N65M5 has the added advantage of being part of a larger family of N-Channel MOSFETs that offer similar features, making it ideal for applications requiring multiple devices.
Application Field and Working Principle
The STP15N65M5 is designed for use in a wide range of applications, including: switching and power management, server and storage, consumer and portable, and energy conversion/regulation. Due to its high power dissipation capability, the STP15N65M5 is particularly well suited for applications where a high power output is needed, such as power amplification stages in audio and audio-related electronics. It is also used in several security and medical monitoring systems due to its low on-resistance and low threshold voltage, making it suitable for high frequency applications. Additionally, the STP15N65M5 can be used in solar panel arrays and electric vehicles, providing a reliable and efficient switching method capable of controlling high current.
The STP15N65M5 features a low gate to source (G-S) voltage, which helps reduce the power required to switch the MOSFET. Additionally, its on-resistance and fast switching speeds provide excellent performance. The MOSFET works on the principle of the metal-oxide-semiconductor field effect transistor, whereby the flow of current between the drain and source is determined by the amount of voltage applied between the gate and source. As the voltage between the gate and source becomes more positive, the amount of current that can flow through the drain to source increases.
Furthermore, the STP15N65M5 is designed for use in high-temperature environments and has a wide operating temperature range. Its thermal characteristics make it ideal for use in high-temperature applications, such as automotive and industrial applications. The capability to handle high power dissipation without an excessive amount of power wasted from the device also make it an attractive option for high-efficiency applications.
Conclusion
The STP15N65M5 is a versatile power MOSFET, making it suitable for a range of applications. It offers excellent switching abilities and very low on-resistance, which makes it optimal for use in high-frequency applications. The STP15N65M5 is thermally stable and its wide operating temperature range makes it well suited for automotive and industrial application scenarios. Additionally, its low gate to source voltage helps reduce required system power, making it optimal for high-power applications that require more efficient operation.
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