
Allicdata Part #: | 497-7507-5-ND |
Manufacturer Part#: |
STP15NM60N |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 600V 14A TO-220 |
More Detail: | N-Channel 600V 14A (Tc) 125W (Tc) Through Hole TO-... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 125W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1250pF @ 50V |
Vgs (Max): | ±25V |
Gate Charge (Qg) (Max) @ Vgs: | 37nC @ 10V |
Series: | MDmesh™ II |
Rds On (Max) @ Id, Vgs: | 299 mOhm @ 7A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 14A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The STP15NM60N is a high-speed N-channel MOSFET developed by STMicroelectronics. It is designed for applications requiring high speed and low on-resistance, and it presents a compact and cost-efficient solution for many power management needs.
Application Field
The STP15NM60N is designed for use as a power switch in portable equipment, such as cell phones and notebook computers, mobile digital audio players, and digital cameras. It is also suitable for toys, entertainment systems, or any applications requiring high speed and low on-resistance. The STP15NM60N can be used as a full-bridge switch in solar energy harvesting, power supply conversion and motor control applications, and can be used as an efficient amplifier in DC-DC and AC-DC converters.
Working Principle
The STP15NM60N MOSFET features N-channel technology that enables a low drain-to-source resistance, R DS(ON) , of only 15mΩ. This allows the device to operate at higher currents and cut off faster than other MOSFETs. The device is specifically designed for high-frequency switching applications, allowing switching frequencies of up to 20MHz. The STP15NM60N is also designed for extremely low gate charge and on-resistance, allowing for low power consumption and high efficiency.
The STP15NM60N is a depletion-mode MOSFET, which means that it is normally on, and an external voltage must be applied to the gate in order to turn it off. The gate of the FET is insulated from the rest of the device by a thin layer of silicon dioxide, allowing the gate to be fully isolated from the drain and source. In this way, the gate can be used to control the amount of current flowing through the channel without current flowing into or out of it.
The STP15NM60N has a built-in vertical N-channel MOSFET structure with a drain-to-source voltage rating of 60 volts and a drain-to-gate voltage rating of 20 volts. It also has a maximum continuous drain current of 7A. The MOSFET has internal protection against electrostatic discharge (ESD) and is rated for temperature ranges from -55°C to 175°C.
In summary, the STP15NM60N is a cost-effective, high-speed N- channel MOSFET that is suitable for many power management applications. Its low on-resistance and high current ratings make it an ideal solution for powering portable devices, providing efficient power switching, and amplifying both DC-DC and AC-DC converters.
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