Allicdata Part #: | 497-16008-5-ND |
Manufacturer Part#: |
STP170N8F7 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 80V 120A TO-220AB |
More Detail: | N-Channel 80V 120A (Tc) 250W (Tc) Through Hole TO-... |
DataSheet: | STP170N8F7 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4.5V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 250W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 8710pF @ 40V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 120nC @ 10V |
Series: | STripFET™ F7 |
Rds On (Max) @ Id, Vgs: | 3.9 mOhm @ 60A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 120A (Tc) |
Drain to Source Voltage (Vdss): | 80V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The STP170N8F7 is a Logic level N-Channel Enhancement Mode Mosfet from STMicroelectronics. It is designed primarily for power switching applications such as Server, Desktop and Notebook PCs, Telecoms, Audio/Video and Automotive. This Mosfet is one of the most reliable, efficient and versatile power switching devices available. It has a high breakdown voltage and an incredibly low on-resistance.
The STP170N8F7 is a Field Effect Transistor (FET) or a type of semiconductor device that is used to regulate or control the flow of electricity in a circuit. It is composed of a semiconductor material with at least three terminals or leads for connection to an external circuit. The STP170N8F7 is an enhancement mode FET with an N-channel design. This means that the current flows between its source and drain when it is turned on and a voltage is applied to the gate. When a voltage is applied to the gate terminal, it changes the electrical properties of the channel, allowing for current to flow.
The STP170N8F7 is designed for high-current, low-voltage applications such as Server, Desktop and Notebook PCs, Telecoms, Audio/Video and Automotive. This MOSFET can handle high power with low parasitic losses due to its advanced packaging technology, which offers superior thermal performance. Its logic level threshold is designed to drive directly from the 3.3V and 5V logic operated components in your circuit. This device is designed to switch very high currents, up to 16A, and can handle voltages up to 170V, offering an excellent alternative to bulky electro-mechanical relays.
This Logic level N-Channel Enhancement Mode Mosfet has a maximum drain-source voltage of 170V and a maximum drain current of 16A. The on-resistance is as low as 16mΩ, making this mosfet an ideal choice for power switching applications where low resistance, high power handling, and low voltage are important. Furthermore, the STP170N8F7 offers a very low threshold voltage making it suitable for low voltage digital logic circuits.
The STP170N8F7 has a minimum operating temperature of -55°C and a maximum operating temperature of 175°C, making it suitable for a wide range of working environments. This mosfet can also handle high frequency AC waveforms with ease, making it ideal for use in high frequency circuits. The design of the package, combined with an integrated ESD protection circuit, offers a high level of protection against accidental system level surges.
The STP170N8F7 is an excellent device for power control applications such as Server, Desktop, and Notebook PC designs. It is also suitable for switching applications in LED dimmer controls, smart appliances, Data Communications, and automotive systems. This MOSFET delivers improved power efficiency, reliability, and longevity for all your power switching needs.
The specific data is subject to PDF, and the above content is for reference
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