STP18NM60N Allicdata Electronics
Allicdata Part #:

497-10305-5-ND

Manufacturer Part#:

STP18NM60N

Price: $ 0.85
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N-CH 600V 13A TO-220
More Detail: N-Channel 600V 13A (Tc) 110W (Tc) Through Hole TO-...
DataSheet: STP18NM60N datasheetSTP18NM60N Datasheet/PDF
Quantity: 1000
1 +: $ 0.85000
10 +: $ 0.82450
100 +: $ 0.80750
1000 +: $ 0.79050
10000 +: $ 0.76500
Stock 1000Can Ship Immediately
$ 0.85
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 110W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 50V
Vgs (Max): ±25V
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
Series: MDmesh™ II
Rds On (Max) @ Id, Vgs: 285 mOhm @ 6.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The STP18NM60N is a N-Channel enhancement mode power MOSFET that is developed for use in AC and DC switched mode power supplies. The STP18NM60N device is particularly suited for high efficiency, cost efficient and low EMI frequency applications where the excellent switching performance of a high frequency MOSFET is needed. In addition, the device also offers protection from direct short-circuits, EMI/RFI, dynamic dv/dt, and gate hole punch-through.

The STP18NM60N has an enhanced critical conduction mode operation and low on-resistance characteristics which make it ideal for use in switch mode power supplies. It features a low threshold gate voltage, fast switching operation, and a low dynamic on-resistance characteristic that make it highly efficient in high frequency applications such as DC/DC converters, switching regulators and inverters. This device also offers superior EMI/RFI performance.

One of the most common applications of the STP18NM60N is in switch mode power supplies. In a typical switch mode power supply, the STP18NM60N is used to control the switching action of an inductor or transformer. The device will be connected to the primary side of a transformer and can be controlled by either a high-frequency signal from a controller or a simple on/off signal generated from a logic gate. When the signal is turned on, the MOSFET will switch on and allow current to flow through the transformer primary winding. The inductance of the primary windings will convert the AC current into a DC current and the transformer secondary winding will then convert this current into the required DC output.

In addition to switch mode power supplies, the STP18NM60N can also be used in motor control applications. It can be used to control the switching of arms in stepper motors, brushless DC motors and other types of DC motors. The STP18NM60N can also be used in motor control circuits to provide dynamic current control and PWM (pulse width modulation) signal generation. It can also be used in electrical circuits to provide the necessary protection and switching.

The STP18NM60N is a useful device for AC and DC switched mode power supplies. It provides low on-resistance characteristics and fast switching action, making it ideal for use in high frequency applications. It also offers superior EMI/RFI performance and superior built-in protection from direct short-circuits, gate hole punch-through and dv/dt. The device is also well suited for use in motor control applications where it can provide dynamic current control and PWM signal generation.

The specific data is subject to PDF, and the above content is for reference

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