STP190N55LF3

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STP190N55LF3 is a type of power MOSFET single that is developed by STMicroelectronics. It has a drain-source voltage (VDS) of 190V, a drain current (ID) of 110A and low on-resistance. It is a part of ST’s STripFET Device Family and offers efficient performance, low gate charge, low gate-source voltage (VGS) and low junction-to-case thermal resistance for power management applications. The STP190N55LF3 is mainly used in power conversion and switch mode power supplies (SMPS) systems.

The STP190N55LF3 has a low gate capacitance that is optimized for the low gate-source frequency, enabling the device to provide fast switching. An onboard gate resistor is also included in the package, protecting the device from over-voltage and short circuit. The low output capacitance also reduces power dissipation and improves conversion efficiency.

The STP190N55LF3 is a high-voltage MOSFET, meaning it is designed to operate at a wide input voltage range of 5V to 125V. The part has a high maximum junction temperature of up to 175°C. It can be used in applications that require high voltage such as white goods, air conditioning, welders and other industrial equipment.

STP190N55LF3 works on the principle of “Metall-Oxide-Semiconductor Field Effect Transistors” (MOSFETs). It uses an insulated gate and a channel of semiconductor material which can be used to conduct or block current from flowing. By applying a voltage to the gate, the device can control current flow by increasing or decreasing the resistance of the channel. The higher the gate voltage, the greater the current conduction will be.

The device has a floating channel, meaning that the majority charge carriers can be altered by changing the voltage on the gate. This makes the device useful for amplifying or switching electronic signals. The body-drain and body-source pn junctions are reverse-biased and are not used to control current flow. A P-channel device works in a similar way but with opposite sign, i.e. by applying a negative voltage to the gate, the conductivity of the channel decreases.

The STP190N55LF3 is a power device with an extremely low on-resistance figure. The output capacitance (Coss) is optimized for a low gate-source frequency of 20ns. This makes the device suitable for switch mode power supplies (SMPS). It also has excellent thermal characteristics and can operate over a wide temperature range of -55℃ to 175℃.

The STP190N55LF3 is a high performance power MOSFET single and is suitable for applications such as SMPS, UPS, welders, white goods and various industrial applications. It is a part of ST’s STripFET Device family and provides an efficient performance and a low gate charge for power management applications. The device operates on the principle of a MOSFET, providing current conduction by controlling the resistance of the channel with a gate voltage.

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