STP1N105K3

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STP1N105K3 is a single N-Channel low-side switch, which is designed to control the load\'s power through an ON/OFF logic level signal. It is also a part of STMicroelectronics\' family of insulatedgate bipolar transistors (IGBTs).

STP1N105K3 is a 4.5 V rated low-side N-Channel MOSFET, which is commonly used for switching loads up to 5 A at a maximum drain-source voltage of 30 V. It can be used from 0.001 Hz or very low frequencies up to 1 MHz or higher frequencies. It can be used for switching and protection circuits in both AC and DC applications, such as motor control, process control, small appliances, industrial machinery, light dimmers, automotive electronics, and telecom applications.

The primary application field of the STP1N105K3 is the control of power loads over digital, logic level signals. More precisely, it is designed to control the power of a load when the logic input level is set to HIGH. It can also be used to switch the power off when the input level is set to LOW, keeping the load off until the next logic level is set HIGH again. The STP1N105K3 also supports overcurrent protection and short circuit protection.

The working principle of the STP1N105K3 relies on a MOSFET transistor. A MOSFET is a transistor that is made up of a series of layers, the gate, the source and the drain. When a small voltage is applied to the gate, an electric field is generated between the gate and the source, making molecules move and allowing current to flow between the source and drain.

The gate insulating layer of the STP1N105K3 is optimized for low sustained condensation and improved performance in humid conditions. The potential turning on threshold is also adapted for door level interfaces.

The body diode of the STP1N105K3 is made from silicon carbide and has an avalanche current rating of 550 A, making the switch sturdier and providing a greater level of protection against short circuit and overload conditions.

The STP1N105K3 also has a non-isolated turn-off technology which avoids any voltage spikes caused by parasitic capacitance during switching. This technology also shortens the MOSFET recovery time to ensure that the switch performs in a timely manner and with increased reliability.

In conclusion, the STP1N105K3 is a single N-Channel low-side switch designed to control loads and protect against overcurrent and short circuit conditions. It is highly suitable for a variety of uses in both AC and DC applications, thanks to its optimized gate insulating layer, body diode, and non-isolated turn-off technology.

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