UNR9118G0L Discrete Semiconductor Products |
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Allicdata Part #: | UNR9118G0LTR-ND |
Manufacturer Part#: |
UNR9118G0L |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Panasonic Electronic Components |
Short Description: | TRANS PREBIAS PNP 125MW SSMINI3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
DataSheet: | UNR9118G0L Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | PNP - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 510 Ohms |
Resistor - Emitter Base (R2): | 5.1 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 20 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max): | 500nA |
Frequency - Transition: | 80MHz |
Power - Max: | 125mW |
Mounting Type: | Surface Mount |
Package / Case: | SC-89, SOT-490 |
Supplier Device Package: | SSMini3-F3 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The UNR9118G0L is a single, pre-biased, Bipolar Junction Transistor (BJT) intended for use in single-ended audio applications such as headphone and power amplifiers. It is a low-voltage, high-current gain device, suitable for use as an amplifier in small, portable applications.
A Bipolar Junction Transistor, or BJT, is a type of semiconductor device, consisting of two P-N type junctions. It has three terminals – the base, collector and emitter – and works by controlling the flow of current between the collector and emitter using the base, creating a current amplification effect. The UNR9118G0L is pre-biased, meaning that the collector-to-emitter voltage is pre-set and the transistor is free to receive input signals up to the specified maximum limit.
Its typical application field is in audio devices, replacing the need for a dedicated amplifier circuit. It is suitable for many applications, including headphone, powered speaker and headphone amplifier designs, for which its high current gain, low noise levels and low power consumption make it an excellent choice. The UNR9118G0L can also be used as a high-speed amplifier in DC motor drive circuits and other high-speed analog signals.
The working principle of the UNR9118G0L is the same as that of any other BJT. When the base of the transistor is positively charged, the current flows from the collector to the emitter, creating an amplified voltage. The transistor acts as an amplifier, increasing the output signal sent to the load. The gain of the transistor is determined by the ratio of the collector voltage to the base voltage, and the gain can be regulated by adjusting the base voltage.
The UNR9118G0L’s unique design allows it to be used in higher switching speed applications while maintaining a low noise level, making it ideal for use in audio applications. Its low power consumption and high current gain make it suitable for use in single-ended audio designs, including headphone and power amplifiers. It is also able to deliver high switching speed and low voltage drop in DC motor drive applications.
The UNR9118G0L is an ideal solution for applications in which a single, pre-biased BJT is required. It offers a high current gain and low noise levels, making it suitable for use in audio designs. It is also suitable for use in DC motor drive circuits, and its low power consumption makes it an excellent choice for small, portable applications.
The specific data is subject to PDF, and the above content is for reference
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