UNR911HG0L Allicdata Electronics

UNR911HG0L Discrete Semiconductor Products

Allicdata Part #:

UNR911HG0LTR-ND

Manufacturer Part#:

UNR911HG0L

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Panasonic Electronic Components
Short Description: TRANS PREBIAS PNP 125MW SSMINI3
More Detail: Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias...
DataSheet: UNR911HG0L datasheetUNR911HG0L Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 80MHz
Power - Max: 125mW
Mounting Type: Surface Mount
Package / Case: SC-89, SOT-490
Supplier Device Package: SSMini3-F3
Description

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The UNR911HG0L is an NPN pre-biased single transistor. As its name implies, the pre-biased feature of the UNR911HG0L allows it to be used in applications where other transistors may not be suitable. The pre-biased feature also provides for an extended operating temperature range of -60°C to +125°C, and the transistor\'s small size allows for easy and efficient installation into various circuits. The UNR911HG0L is designed to be used in circuits where high current capability is needed. It has a maximum continuous collector current of 50 mA, making it a suitable choice for power and switching applications. The UNR911HG0L also offers good breakdown voltage, current gain, and thermal resistance ratings, making it an excellent choice for a wide range of applications. One of the most common applications for the UNR911HG0L is for switching purposes. In this application, the transistor is used to open or close a circuit. When a voltage is applied to the emitter-base junction of the transistor, current will flow between the emitter and collector terminals of the device, allowing the circuit to be switched on or off. The degree of on/off switching can be controlled by the base current, which can be adjusted with a current limiting resistor. Another popular application of the UNR911HG0L is as an amplifier. In this configuration, the signal voltage at the emitter is amplified by the current gain of the transistor, which allows the signal to be further amplified at higher levels. This makes the UNR911HG0L an ideal choice for audio, video, and communication circuits. The UNR911HG0L can also be used as a complementary pair, in which two transistors are used to create a single circuit. This configuration is used to increase the efficiency of a circuit, as both transistors will share the load current, reducing the overall current drain on the circuit. In addition to its multiple applications, the UNR911HG0L also provides superior reliability due to its long working life. The transistor\'s ability to withstand large currents and high temperatures makes it an excellent choice for applications where reliability is critical. Furthermore, the UNR911HG0L has been rigorously tested to ensure it meets the highest standards of quality, making it a reliable and cost-effective solution. In conclusion, the UNR911HG0L is a versatile and reliable NPN pre-biased single transistor. Its small size and wide operating temperature range make it ideal for variety of applications, including switching, amplification, and complementary pair configurations. The UNR911HG0L also offers exceptional breakdown voltage, current gain, and thermal resistance ratings, making it an excellent choice for any circuit needs.

The specific data is subject to PDF, and the above content is for reference

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