UNR921KG0L Discrete Semiconductor Products |
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Allicdata Part #: | UNR921KG0LTR-ND |
Manufacturer Part#: |
UNR921KG0L |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Panasonic Electronic Components |
Short Description: | TRANS PREBIAS NPN 125MW SSMINI3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | UNR921KG0L Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | NPN - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 10 kOhms |
Resistor - Emitter Base (R2): | 4.7 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 20 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max): | 500nA |
Frequency - Transition: | 150MHz |
Power - Max: | 125mW |
Mounting Type: | Surface Mount |
Package / Case: | SC-89, SOT-490 |
Supplier Device Package: | SSMini3-F3 |
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Transistors - Bipolar (BJT) - Single, Pre-Biased
UNR921KG0L is a single, pre-biased bipolar junction transistor (BJT) designed for use in general purpose applications where low current gain and low on-state resistance is required. This transistor is a three-terminal, unipolar (npn) device capable of operating in several configurations, including common emitter, emitter follower, and common Base.
Application Field:
UNR921KG0L transistors are widely used in low-power general-purpose amplifying applications. It can be used as part of audio circuits, including the amplification and buffering of audio signals. It can also be used in control channels and logic signals. Due to their wide range of operating voltages, these transistors can also be used in applications such as motor-speed control or low-power linear control.
Working Principle:
UNR921KG0L transistors are constructed from three terminals, the Base, Emitter, and Collector. The Base forms the control terminal of the device, and is responsible for controlling the transfer of carriers between the Emitter and the Collector. The Emitter is the source of charge carriers, while the Collector is the draining point of those carriers.
The Charge carriers are majority carriers, usually positive-free carriers, that flow into the Collector when the Base-Emitter junction is forward-biased. When a small current is passed through the Base terminal, it enables a large current to flow through the Collector and Emitter terminals. This phenomenon is called current amplification.
The working principle of a transistor closely resembles that of an electronic switch. When the Base is at a high potential, it allows more carriers to flow through it, thus allowing a larger current flow between the Collector and Emitter. To reduce the current flowing through the transistor, the Base voltage is reduced. This turns the transistor off, and current flow between the Collector and Base is interrupted.
Advantages:
UNR921KG0L transistors have many advantages over other kinds of transistors. Their low operational voltage requirements and low current gains, combined with their rugged design, make them well-suited for general-purpose applications. They are suited for use in rugged electronic devices, such as portable music players and electronic equipment.
UNR921KG0L transistors are highly reliable and require only minimal maintenance. They are constructed from high-purity materials, ensuring high performance and reliability. Additionally, the transistors are highly resistant to thermal shock and vibration.
The specific data is subject to PDF, and the above content is for reference
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UNR9213J0L | Panasonic El... | 0.0 $ | 1000 | TRANS PREBIAS NPN 125MW S... |
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