UNR921DG0L Discrete Semiconductor Products

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The UNR921DG0L is a single, pre-biased, bipolar junction transistor (BJT). It is an NPN type BJT that is used to amplify signals and increase power efficiency in various applications. The UNR921DG0L is a cost-effective, high-performance solution for applications such as motor control, switching applications, instrumentation, and telecommunication.

The UNR921DG0L is particularly suitable for situations requiring a low power, low voltage transistor. With its high gain characteristics, the transistor allows power to be increased efficiently, yet still remain within the confines of the electrical equipment’s power supply.

The UNR921DG0L is designed to provide a current gain of approximately 150, thus allowing it to achieve high switching speeds. These high speeds are often necessary for power supply regulation and motor control. They also help to reduce switching losses and increase power efficiency when used in switching applications or switching mode power supplies.

The UNR921DG0L has an integrated current mirror circuit. This circuit allows a user to easily adjust the device’s gain and current flow. This feature is particularly useful for applications requiring adjustable current range, such as motor control and instrumentation.

The collector-base breakdown voltage of the UNR921DG0L is impressive. It offers a maximum voltage of 50V, which is sufficient for most switching applications. Additionally, it offers a very low thermal resistance rating. This rating helps to ensure that the transistor does not overheat as a result of higher levels of current usage.

The UNR921DG0L is a reliable transistor which is popular amongst industrial users. It can be used in various applications which require a low power, low voltage device that can achieve high current gain. Its ability to easily adjust its current flow, combined with its impressive breakdown voltage rating, makes this transistor a valuable choice for low power applications.

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