UNR9119G0L Discrete Semiconductor Products |
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Allicdata Part #: | UNR9119G0LTR-ND |
Manufacturer Part#: |
UNR9119G0L |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Panasonic Electronic Components |
Short Description: | TRANS PREBIAS PNP 125MW SSMINI3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
DataSheet: | UNR9119G0L Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | PNP - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 1 kOhms |
Resistor - Emitter Base (R2): | 10 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 30 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max): | 500nA |
Frequency - Transition: | 80MHz |
Power - Max: | 125mW |
Mounting Type: | Surface Mount |
Package / Case: | SC-89, SOT-490 |
Supplier Device Package: | SSMini3-F3 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
A UNR9119G0L transistor is a type of bipolar junction transistor (BJT) and belongs to the single, pre-biased category. This type of transistor is the standard off-the-shelf version of the variable-potential transistor that is available in the market. The major difference between this type and other BJTs is that the reverse current flow is controlled and limited by a built-in diode. This diode can be adjusted so as to achieve the desired current flow and voltage levels.
This type of transistor is used in a wide variety of applications, including power supplies, RF amplifiers, and analog signal conditioning. It is also used in automotive electronics, industrial applications, and commercial communications. The device is very useful in power converters, power amplifiers, motor control circuits, and other applications where current and voltage control is needed.
The working principle of a UNR9119G0L transistor is basically the same as any other bipolar junction transistor. It works by controlling the current flow between two electrodes, known as the collector and the emitter. A small current is sent from the base to the collector, with the amount of current controlled by the amount of voltage applied to the base terminal. The bipolar junction between the collector and the emitter then starts to conduct current and the current produced is called the collector current. The collector current is then directed to the output stage and is used for various functions, such as driving a motor, switching, etc.
This type of transistor is also known as a fixed bias transistor because it comes with an internal diode that is adjusted to a predetermined voltage so as to limit the current flow and voltage levels produced by the transistor. This type of transistor is particularly useful in high-frequency applications, where very fast switching speeds are required. It is also used in analog signal processing applications, such as audio amplifiers and filters, as well as in power converter applications.
The advantages of using a UNR9119G0L transistor are many. It is a very robust device and can handle high power levels. It also has a very low on-resistance, which makes it very efficient in power conversion applications. Moreover, this type of transistor can be used in both high-power and low-power applications, as it can be easily adjusted to suit the current and voltage levels required. Plus, this type of transistor is also said to offer better reliability and performance compared to other BJT types.
In conclusion, a UNR9119G0L transistor is a standard off-the-shelf transistor and is used in a variety of applications. It is a single, pre-biasing type of transistor, so it comes with a built-in diode which can be adjusted for desired current and voltage levels. This type of transistor is very popular in power converters, power amplifiers, motor control circuits, and other applications. It also offers a high degree of reliability and performance compared to other bipolar junction transistors.
The specific data is subject to PDF, and the above content is for reference
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