UNR9117G0L Discrete Semiconductor Products

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Transistor Type:	PNP - Pre-Biased
Current - Collector (Ic) (Max):	100mA
Voltage - Collector Emitter Breakdown (Max):	50V
Resistor - Base (R1):	22 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:	160 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic:	250mV @ 300µA, 10mA
Current - Collector Cutoff (Max):	500nA
Frequency - Transition:	80MHz
Power - Max:	125mW
Mounting Type:	Surface Mount
Package / Case:	SC-89, SOT-490
Supplier Device Package:	SSMini3-F3

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UNR9117G0L Application Field and Working PrincipleThe UNR9117G0L is a pre-biased, NPN Bipolar Transistor (BJT) designed for use in industrial and consumer electrical products. This transistor is a three-lead package that fares better at higher power levels than its multipin siblings. When properly configured, the UNR9117G0L is capable of smoothly transitioning resistive loads at high current levels, allowing it to be easily integrated into numerous applications.The UNR9117G0L is ideal for high current applications, and when combined with advanced transistor engineering, it can deliver excellent performance. Its low saturation voltage, built-in protection against thermal runaway, and a low voltage drop across the load make it an excellent choice for applications that require minimal power dissipation and high reliability.The UNR9117G0L is classified as a pre-biased transistor, meaning that two of its three terminals are internally connected and form a diode junction. This diode junction forms a base-emitter path for electrons, which then travel through the base-collector channel to have their energy increased. The collector-emitter combination then provides the current path needed to power the resistive load.The UNR9117G0L is primarily used in applications in which high current supports are required, such as in automotive applications, or in industrial applications where current needs to be regulated. The pre-biased UNR9117G0L allows for much faster switching speeds than its counterparts, which makes it an ideal choice for high speed applications. Additionally, its built-in protection against thermal runaway ensures the smooth flow of current, preventing power supply disruption and eliminating the need for additional components.The low saturation voltage of the UNR9117G0L makes it useful in applications that require precisely controlled power delivery. This allows it to provide the desired current while preventing any potential fluctuations. The low voltage drop across the load further ensures that power regulation is accurate and efficient.The UNR9117G0L is also capable of providing current-regulated, fixed-level control for static loads. Load current can be set at a fixed level, and the UNR9117G0L offers protection against over-current surges. This means that current can be set at a constant level and remain stable throughout its usage.The robust design of the UNR9117G0L makes this pre-biased transistor an ideal choice in many different applications. It is suitable for high current, high-speed operations and offers excellent protection against thermal runaway. The UNR9117G0L is also a great choice for applications that require precise power regulation, thanks to its low saturation voltage and excellent protection against over-current surges. With its solid design and impressive performance, the UNR9117G0L is a great choice for any application that requires a reliable and efficient transistor.

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