UNR9210G0L Allicdata Electronics

UNR9210G0L Discrete Semiconductor Products

Allicdata Part #:

UNR9210G0LTR-ND

Manufacturer Part#:

UNR9210G0L

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Panasonic Electronic Components
Short Description: TRANS PREBIAS NPN 125MW SSMINI3
More Detail: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias...
DataSheet: UNR9210G0L datasheetUNR9210G0L Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 150MHz
Power - Max: 125mW
Mounting Type: Surface Mount
Package / Case: SC-89, SOT-490
Supplier Device Package: SSMini3-F3
Description

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The UNR9210G0L is a single, pre-biased bipolar junction transistor (BJT) used in a variety of applications. It consists of two junctions formed between three regions: emitter, base and collector. BJT transistors are used to amplify and control signals, enabling power to be control at the same time. This device has a low input bias current, making it suitable for low-current switching and amplifying applications.

The UNR9210G0L is available in a TO-92 profile package, and has a high-voltage breakdown rating of 250 V, allowing it to be used in applications requiring a higher voltage stability than many other transistors. This device is capable of operating in both switching and linear modes, giving it a wide range of applications. Additionally, it features a high-speed (200V/usec) transition time, making it ideal for high-frequency applications.

The working principle of the UNR9210G0L is based on the BJT\'s ability to control the flow of electrons across its junction. When a small current is sent through the base junction, the transistor turns "ON" and allows current to flow from the emitter to the collector. Conversely, when no current is sent through the base, the transistor turns "OFF" and prevents current from flowing between the emitter and collector.

Due to its versatile design, the UNR9210G0L is suitable for a wide range of applications. It is commonly used in amplifier circuits, in audio-processing equipment, and in power-conditioning applications where high-stability and high-speed switching are required. Additionally, it is often used in control systems, where accurate control and low power consumption are important factors.

In summary, the UNR9210G0L is a single, pre-biased bipolar junction transistor suitable for use in a variety of applications. It has a low input bias current, making it suitable for low-current switching and amplifying applications, and is capable of operating in both switching and linear modes. Additionally, it features a high-speed (200V/usec) transition time, making it ideal for high-frequency applications. This versatile device has a wide range of applications, from amplifiers and audio-processing equipment to control systems.

The specific data is subject to PDF, and the above content is for reference

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