
UNR9210G0L Discrete Semiconductor Products |
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Allicdata Part #: | UNR9210G0LTR-ND |
Manufacturer Part#: |
UNR9210G0L |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Panasonic Electronic Components |
Short Description: | TRANS PREBIAS NPN 125MW SSMINI3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | NPN - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 160 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max): | 500nA |
Frequency - Transition: | 150MHz |
Power - Max: | 125mW |
Mounting Type: | Surface Mount |
Package / Case: | SC-89, SOT-490 |
Supplier Device Package: | SSMini3-F3 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The UNR9210G0L is a single, pre-biased bipolar junction transistor (BJT) used in a variety of applications. It consists of two junctions formed between three regions: emitter, base and collector. BJT transistors are used to amplify and control signals, enabling power to be control at the same time. This device has a low input bias current, making it suitable for low-current switching and amplifying applications.
The UNR9210G0L is available in a TO-92 profile package, and has a high-voltage breakdown rating of 250 V, allowing it to be used in applications requiring a higher voltage stability than many other transistors. This device is capable of operating in both switching and linear modes, giving it a wide range of applications. Additionally, it features a high-speed (200V/usec) transition time, making it ideal for high-frequency applications.
The working principle of the UNR9210G0L is based on the BJT\'s ability to control the flow of electrons across its junction. When a small current is sent through the base junction, the transistor turns "ON" and allows current to flow from the emitter to the collector. Conversely, when no current is sent through the base, the transistor turns "OFF" and prevents current from flowing between the emitter and collector.
Due to its versatile design, the UNR9210G0L is suitable for a wide range of applications. It is commonly used in amplifier circuits, in audio-processing equipment, and in power-conditioning applications where high-stability and high-speed switching are required. Additionally, it is often used in control systems, where accurate control and low power consumption are important factors.
In summary, the UNR9210G0L is a single, pre-biased bipolar junction transistor suitable for use in a variety of applications. It has a low input bias current, making it suitable for low-current switching and amplifying applications, and is capable of operating in both switching and linear modes. Additionally, it features a high-speed (200V/usec) transition time, making it ideal for high-frequency applications. This versatile device has a wide range of applications, from amplifiers and audio-processing equipment to control systems.
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