UNR91AMG0L Discrete Semiconductor Products |
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Allicdata Part #: | UNR91AMG0LTR-ND |
Manufacturer Part#: |
UNR91AMG0L |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Panasonic Electronic Components |
Short Description: | TRANS PREBIAS PNP 125MW SSMINI3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
DataSheet: | UNR91AMG0L Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | PNP - Pre-Biased |
Current - Collector (Ic) (Max): | 80mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 2.2 kOhms |
Resistor - Emitter Base (R2): | 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max): | 500nA |
Frequency - Transition: | 80MHz |
Power - Max: | 125mW |
Mounting Type: | Surface Mount |
Package / Case: | SC-89, SOT-490 |
Supplier Device Package: | SSMini3-F3 |
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The UNR91AMG0L is a single pre-biased bipolar transistor, used for a wide range of electronic application. It is constructed with a minimum current transporting capability of 900mA and a minimum power dissipating capacity of 600mW. This allows the UNR91AMG0L to be used in applications that require higher current and temperature capabilities.
In general, the UNR91AMG0L is used in order to amplify current, or make current flow in one direction to a limited extent. This done by controlling the current through the transistor, using a voltage source. In a typical application, the source voltage is fed into the emitter. This then in turn drives the current through the base-collector junction. This is how the transistor amplifies the current, and the base voltage is set to a certain value to control how much current flows through the device.
In operation, the UNR91AMG0L has two key components, the collector and the emitter. The collector is the output of the transistor and the emitter is the input. The base is the control element, as it allows current to flow from the collector to the emitter when the base is forward biased. This controls the current drawn from the base, thus controlling the voltage and current at the collector.
The UNR91AMG0L also works in combination with other components to provide a number of different functions. For example, this device can be used to amplify audio signals as well as providing DC power control. As a result, the UNR91AMG0L is often used in audio amplifiers, power switching circuits, voltage regulators, and numerous other electronic applications.
Finally, the UNR91AMG0L features several pre-biasing features that make it suitable for certain applications. Pre-biasing is the process of applying a bias voltage across the base-emitter junction of the transistor before it is switched on. By using this method, the transistor can be made to start more quickly, thus allowing the device to be used in circuits that require fast switching times.
In conclusion, the UNR91AMG0L is a versatile and reliable single pre-biased bipolar transistor, which is perfect for a wide range of applications. It is capable of delivering up to 900mA of current and up to 600mW of power dissipation. Furthermore, it has a number of pre-biasing features which make it extremely suitable for applications such as audio amplifiers, power switching circuits and voltage regulators.
The specific data is subject to PDF, and the above content is for reference
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