UNR911EG0L Discrete Semiconductor Products |
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Allicdata Part #: | UNR911EG0LTR-ND |
Manufacturer Part#: |
UNR911EG0L |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Panasonic Electronic Components |
Short Description: | TRANS PREBIAS PNP 125MW SSMINI3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
DataSheet: | UNR911EG0L Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | PNP - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 47 kOhms |
Resistor - Emitter Base (R2): | 22 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 60 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max): | 500nA |
Frequency - Transition: | 80MHz |
Power - Max: | 125mW |
Mounting Type: | Surface Mount |
Package / Case: | SC-89, SOT-490 |
Supplier Device Package: | SSMini3-F3 |
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A UNR911EG0L transistor is a type of single pre-biased bipolar junction transistor (BJT) that is often used in power supply and load switching applications. It is one type of BJT that is capable of withstanding extreme temperatures and high voltage levels. The UNR911EG0L is available in a variety of case sizes and mounting styles for use in numerous high-power systems where switching and loads are present.
The UNR911EG0L is often used to switch and load circuits in high-power systems such as power supplies and high-power electric vehicles. It has a high collector current rating and is designed to withstand high voltage levels. It also has a high breakdown voltage rating and is resistant to temperature extremes. This makes it an ideal choice for power applications such as inverters, power supplies and motor controls.
The UNR911EG0L uses a normal PNP-type transistor as its main components. A pair of n-channel and p-channel MOSFETs are also used for current limiting and protective functions. The UNR911EG0L has a collector-emitter breakdown voltage (VcE) of up to 200V and a collector-base breakdown voltage (Vcb) of up to 40V. The transistor has a maximum collector current rating of 0.6 A, which should be sufficient for most applications.
The UNR911EG0L works by having two PN junctions. One junction is made up of two n-type semiconductor materials and the other one is made up of two p-type materials. When one of these two junctions is forward biased, current will flow in one direction through the junction. This current is then used to control current through the other junction.
The UNR911EG0L utilizes three terminals, the base, collector and emitter. The base terminal is used to control the current between the collector and the emitter and can be used to switch between high and low current states. By connecting a current source to the base terminal, the transistor can be used to control the current that goes through the collector, thus controlling the output from the collector.
The UNR911EG0L is a robust transistor that can be used in many types of applications. It is widely used for power supply and load switching as well as high-power motor control and inverters. Its high collector current rating and high breakdown voltage rating make it suitable for high-power systems. Additionally, it is also highly temperature resistant, making it a good choice for harsh environments. The UNR911EG0L is capable of producing reliable and consistent performance.
The specific data is subject to PDF, and the above content is for reference
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