UNR9216G0L Allicdata Electronics

UNR9216G0L Discrete Semiconductor Products

Allicdata Part #:

UNR9216G0LTR-ND

Manufacturer Part#:

UNR9216G0L

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Panasonic Electronic Components
Short Description: TRANS PREBIAS NPN 125MW SSMINI3
More Detail: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias...
DataSheet: UNR9216G0L datasheetUNR9216G0L Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 4.7 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 150MHz
Power - Max: 125mW
Mounting Type: Surface Mount
Package / Case: SC-89, SOT-490
Supplier Device Package: SSMini3-F3
Description

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UNR9216G0L is a pre-biased single bipolar junction transistor (BJT) which exhibits the novel properties of both PNP and NPN transistors. The device is especially useful for a broad range of applications where the need arises to isolate two voltage sources while maintaining a high current capacity. Therefore it is suitable for switching and power conversion applications.

The device can be used in much the same way as two separate transistors, one PNP and one NPN, but eliminates the need for two separate components and can make the same otherwise complex voltage sources connections between the two transistors.

The UNR9216G0L consists of a small mesa-like structure made of doped silicon material. The PNP and NPN transistors are integrated into a single structure, the base region contains a second gate which is connected to the PNP transistor\'s collector. The collector of the NPN transistor is connected to the PNP\'s base contact. Thus, the UNR9216G0L behaves as a single bipolar transistor with two separategate connections. This allows the EUN9216G0L to provide twice the gain with no additional current requirement.

The base region of the device is pre-biased with a voltage between 0.6 to 1.2V. This allows the UNR9216G0L to operate bi-directionally with fast switching response. The current gain and output impedance of the transistor can be adjusted by adjusting the base-emitter voltage and changing the collector current.

The UNR9216G0L features an excellent thermal resistance, enabling it to operate in high temperature environments such as power management applications. The device also features a fast turn-on/off characteristic, reducing its switching times by an order of magnitude over standard transistors. Its high current rating allow it to control power circuits up to 250A with no degradation in performance.

The UNR9216G0L device is suitable for power conversion in motor drives, solar panel arrays, AC motor control and other power management applications. It eliminates the need for two separate transistors and can be used to switch between different manual device input signals, allowing for more efficient designs. The pre-biased output transistor reduces risk of accidental short-circuiting and eliminates the need for additional resistors, allowing for a more efficient design.

The UNR9216G0L has also seen widespread use in amplifier circuits and can be used to provide signals where additional gain is required. The device is also used in switching and delay circuits, helping to reduce power requirements. Its wide range of applications make the UNR9216G0L an essential component for many electronic designs.

The specific data is subject to PDF, and the above content is for reference

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