UNR911BG0L Discrete Semiconductor Products

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Transistor Type:	PNP - Pre-Biased
Current - Collector (Ic) (Max):	100mA
Voltage - Collector Emitter Breakdown (Max):	50V
Resistor - Base (R1):	100 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:	160 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic:	250mV @ 300µA, 10mA
Current - Collector Cutoff (Max):	500nA
Frequency - Transition:	80MHz
Power - Max:	125mW
Mounting Type:	Surface Mount
Package / Case:	SC-89, SOT-490
Supplier Device Package:	SSMini3-F3

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The UNR911BG is a transistor designed to be used in both consumer and professional applications. It is a single, pre-biased bipolar junction transistor (BJT). The pre-biasing helps improve the performance of the device, making it suitable for use in applications such as audio amplifiers, radio transmitters, and power management circuits.The UNR911BG contains a single, PNP NPN transistors structure. As with all PNP NPN transistors, it consists of two layers of semiconductor material that are doped differently to form two “junctions” – the collector-base junction and the emitter-base junction. The collector and emitter are the main terminals of the device, and when a voltage is applied between them, current passes through the transistor. The amount of current is controlled by the base terminal and is affected by the level of doping in the transistor.The main advantage of using the UNR911BG over other types of transistors is its pre-biased design. This means that the base-emitter voltage, or the voltage between the base and the emitter of the transistor, is biased during manufacture to a certain level. This helps reduce the time and expense of the device’s setup and ensures that the transistor is correctly biased for optimal performance.Another benefit of the UNR911BG is its ability to amplify very low signals. This makes it ideal for use in low noise applications such as radio receivers and automotive audio systems. The internal biasing of the device also ensures that the device’s output is stable, thus reducing the chances of distortion.The UNR911BG is also designed to be used in high-speed applications. It has an internal delay of 1μs and its high speed switching capabilities make it suitable for use in digital logic circuits and communications systems. The device also has a high cooling capacity, which helps to protect it from overheating in high power applications.Finally, the device offers excellent protection against electrostatic discharge (ESD). This protection helps to reduce the chance of any damage occurring to the device due to ESD.In conclusion, the UNR911BG is a versatile and reliable transistor that can be used in a wide range of consumer and professional applications. Its unique pre-biased design ensures that it is always operating at its optimal performance level, and its speed and ESD protection make it ideal for use in high speed and high power applications.

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