UNR921FG0L Discrete Semiconductor Products

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Transistor Type:	NPN - Pre-Biased
Current - Collector (Ic) (Max):	100mA
Voltage - Collector Emitter Breakdown (Max):	50V
Resistor - Base (R1):	4.7 kOhms
Resistor - Emitter Base (R2):	10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:	30 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic:	250mV @ 300µA, 10mA
Current - Collector Cutoff (Max):	500nA
Frequency - Transition:	150MHz
Power - Max:	125mW
Mounting Type:	Surface Mount
Package / Case:	SC-89, SOT-490
Supplier Device Package:	SSMini3-F3

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The UNR921FG0L is a type of transistor known as a “single, pre-biased” bipolar junction transistor (BJT). The transistor is used for a variety of applications, and it works based on the principles of electric current flow through a semiconductor.When it comes to the electrical definition of the single, pre-biased BJT, it is a type of transistor in which both the Base-Emitter and the Collector-Emitter junctions are initially forward-biased. This can be accomplished by connecting the Base-Emitter junction to the outside power source, so that it is biased by an external voltage, or through a current source that can take the place of the DC voltage supplying electric current to the desired junction.The common practical uses of pre-biased BJTs include frequent switching applications and analog circuit applications, such as amplifiers and signal conditioning. As the external voltage applied to the Base-Emitter junction is constant, the current gain (known as the beta value) can be set to a fixed value for a particular device. Furthermore, this type of BJT can also handle higher currents than the non-pre-biased BJT, which is beneficial for applications that require higher levels of output current.The operation of the UNR921FG0L is based on the principles of electrical current flow through a semiconductor material. A semiconductor material, such as silicon, consists of medium resistance properties, which can be utilized to create BJT transistors. The BJT consists of a Base region, an Emitter region, and a Collector region. The Base region acts like a ‘gate’, allowing or restricting electrical current flow through the emitter and collector regions, depending on the voltage applied to it.When the base is supplied with a positive voltage, electrons from the emitter will flow to the collector side and create a current flow. This traveling of electrons from the emitter to the collector is known as the ‘conventional current’. When the external voltage applied to the base is increased, the current also increases; conversely, when the voltage is decreased, the current decreases. The ability to control current flow through the base region makes the BJT well-suited for applications that require precise control of the current flowing.The pre-biased version of the BJT is useful in applications where the current gain needs to remain constant over the life of the device. By applying a constant external voltage to the Base-Emitter junction, the current gain of the transistor will not vary significantly over time. This is useful in applications that require precise control of the current level over extended periods of time, such as signal conditioning.Overall, the UNR921FG0L is a type of single, pre-biased bipolar junction transistor that can be used in a variety of applications. By taking advantage of its ability to keep the current gain of the transistor at a fixed value, this device can be used for precise control of current flow over extended periods of time. Furthermore, due to its ability to handle higher currents, it also makes it an ideal choice for applications that require a higher level of output.

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