UNR911LG0L Discrete Semiconductor Products |
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Allicdata Part #: | UNR911LG0LTR-ND |
Manufacturer Part#: |
UNR911LG0L |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Panasonic Electronic Components |
Short Description: | TRANS PREBIAS PNP 125MW SSMINI3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
DataSheet: | UNR911LG0L Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | PNP - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 4.7 kOhms |
Resistor - Emitter Base (R2): | 4.7 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 20 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max): | 500nA |
Frequency - Transition: | 80MHz |
Power - Max: | 125mW |
Mounting Type: | Surface Mount |
Package / Case: | SC-89, SOT-490 |
Supplier Device Package: | SSMini3-F3 |
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A UNR911LG0L is a single pre-biased transistor, classified as a bipolar junction transistor (BJT). This type of transistor has two regions: the emitter and the collector. A base region is usually located between the two. When the base voltage is higher than the collector\'s, a conduction path will form allowing current to flow between the emitter and the collector. This is known as a forward-biased condition.
The UNR911LG0L is a pre-biased device which can provide a longer life. This is because it has a low base current, which causes increased protection against static overload and short-circuit conditions. Additionally, this transistor is capable of preventing the device from exceeding the critical limits of its operation.
The UNR911LG0L has many common applications in electronic circuits that require very high levels of performance and reliability. One such example is its use in automotive applications. This transistor can be used in the development of automobile starter systems, ignition systems, and fuel injection systems.
The other major areas where the UNR911LG0L can be found include communication systems, such as in cell phones, as well as home automation, household appliances, and industrial automation. This device can also be utilized in the development of power electronics products such as motor controls, power supplies, DC-DC converters, and AC motor starters. Additionally, this transistor can be used for low noise amplifier design and phased-array radar systems.
The transistors working principle can be easily understood. When a forward bias is applied to the collector, current begins to flow through the emitter which causes a voltage drop across the collector-emitter junction known as the base-emitter voltage. This causes a large increase in current across the collector (which is known as a "collector current"). This collector current is then used to drive other components in a circuit.
This device also functions as an amplifier when used in the common Emitter Circuit configuration. An input signal is applied to the base-emitter junction, which is then amplified by the collector current. This amplified signal can then drive other components in the circuit, such as LEDs, speakers, or other motors.
The UNR911LG0L can also be used in a common base circuit configuration. In this case, the base current is used to control the magnitude of the collector current. This device is used in this configuration because it provides better current gain compared to the common emitter configuration.
The UNR911LG0L is a reliable and versatile device with many applications. It is most commonly used in automotive, communication, home automation, and industrial automation. Additionally, it has a wide range of high-performance applications such as in amplifier circuits and phased-array radar systems. As such, this transistor has a number of uses to a variety of industries and users.
The specific data is subject to PDF, and the above content is for reference
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