UNR91A3G0L Allicdata Electronics

UNR91A3G0L Discrete Semiconductor Products

Allicdata Part #:

UNR91A3G0LTR-ND

Manufacturer Part#:

UNR91A3G0L

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Panasonic Electronic Components
Short Description: TRANS PREBIAS PNP 125MW SSMINI3
More Detail: Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias...
DataSheet: UNR91A3G0L datasheetUNR91A3G0L Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 80MHz
Power - Max: 125mW
Mounting Type: Surface Mount
Package / Case: SC-89, SOT-490
Supplier Device Package: SSMini3-F3
Description

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The UNR91A3G0L is a single, pre-biased transistor, classified under transistors – Bipolar (BJT). This type of transistor is a three terminal semiconductor device composed of two P-N junctions. Compared to other types of transistors, it has a simple design that has been used in various applications since its invention.

The UNR91A3G0L is typically used in applications requiring high-level switching or not requiring precise switching, since it is pre-biased. Some common applications include: driving motors or lamps, power supply switching, power amplifiers, class B push-pull operation, high frequency switching, and digital logic circuits. It can also be used in radio frequency and telecommunication systems, and other circuits requiring switching by a low-level signal.

The working principle of the UNR91A3G0L can be broken down into three main concepts. First, when the base-emitter junction is in forward-biased condition, a small amount of current flows from the base to the emitter, which causes an increase in the collector current by a larger amount. This is known as the Beta, or the forward current gain of the transistor. The Beta of a transistor can be increased by increasing the current passing through the base, which in turn increases the collector current.

Second, the collector current will act to switch the transistor on and off by controlling the base current. As the base current increases, the collector current will also increase, allowing a larger amount of current to flow from the collector to the emitter. This allows for a controlled current to be passed through the transistor, depending on the current in the base.

Finally, the collector-emitter voltage of a transistor depends on the collector current, the resistance of the collector-emitter circuit, and the amount of current passing through the collector-emitter circuit. As the transistor turns on, the voltage across the collector-emitter circuit will increase. The resistance of the circuit will determine the maximum voltage across the circuit.

These three working principles combine to make the UNR91A3G0L an ideal transistor for use in a wide range of applications. By carefully controlling the base current, it is possible to control the amount of current that passes through the collector-emitter circuit, enabling a wide range of switching abilities. This makes it a versatile choice for many applications, and is a great solution for those who require a transistor with simple yet effective operation.

The specific data is subject to PDF, and the above content is for reference

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