UNR91A6G0L Discrete Semiconductor Products |
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Allicdata Part #: | UNR91A6G0LTR-ND |
Manufacturer Part#: |
UNR91A6G0L |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Panasonic Electronic Components |
Short Description: | TRANS PREBIAS PNP 125MW SSMINI3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
DataSheet: | UNR91A6G0L Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | PNP - Pre-Biased |
Current - Collector (Ic) (Max): | 80mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 4.7 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 160 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max): | 500nA |
Frequency - Transition: | 80MHz |
Power - Max: | 125mW |
Mounting Type: | Surface Mount |
Package / Case: | SC-89, SOT-490 |
Supplier Device Package: | SSMini3-F3 |
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The UNR91A6G0L is a single, pre-biased bipolar junction transistor (BJT). It is used in a variety of applications, ranging from power switching and amplification to the protection of complex integrated circuits. The device is made up of three basic components, the base, the collector, and the emitter.
The base is a semiconductor material usually made of silicon or germanium, which is connected to the collector and the emitter. The collector is typically made of metal and is used to collect carriers from the emitter. When a current is applied to the base, the collected carriers are attracted and a voltage drop between the collector and emitter occurs, producing an output current.
The UNR91A6G0L has a pre-biased configuration, which means that it has a built-in voltage bias applied to the collector. This allows the transistor to be used without external bias components, greatly simplifying the circuit design. A further advantage is that the voltage bias also helps to limit the maximum emitter current, which helps to protect against accidental overcurrent.
The UNR91A6G0L is primarily used as an amplifier, allowing a signal of one voltage range to be amplified to a signal of a different voltage range. This is done by varying the current at the base and the collector-emitter voltage relationship. This allows for amplification or attenuation of any signal at any voltage range. It can also be used as a switch for power control, signal isolator, voltage regulator, and a variety of similar applications.
The UNR91A6G0L can also be used as an electrical protection device. It can be used to protect sensitive integrated circuits from voltage drops or other spikes by quickly isolating the circuit from the power source. This protection is provided by the built-in reverse bias protection diode, which quickly turns off the power supply if the voltage drops below a certain level.
In conclusion, the UNR91A6G0L is a pre-biased single bipolar junction transistor, which has a wide range of applications including amplification, switching, electrical protection, and signal isolation. It is especially useful for applications requiring the protection of sensitive integrated circuits, and for applications requiring amplification of signals. Its pre-biased configuration allows for simpler circuit designs and can help to protect against accidental overcurrent.
The specific data is subject to PDF, and the above content is for reference
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