UNR9213G0L Allicdata Electronics

UNR9213G0L Discrete Semiconductor Products

Allicdata Part #:

UNR9213G0LTR-ND

Manufacturer Part#:

UNR9213G0L

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Panasonic Electronic Components
Short Description: TRANS PREBIAS NPN 125MW SSMINI3
More Detail: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias...
DataSheet: UNR9213G0L datasheetUNR9213G0L Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 150MHz
Power - Max: 125mW
Mounting Type: Surface Mount
Package / Case: SC-89, SOT-490
Supplier Device Package: SSMini3-F3
Description

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The UNR9213G0L is a single pre-biased transistor from the family of bipolar junction transistors (BJTs). It is typically used in applications such as amplifiers, multiplexers, and phase-locked loops (PLLs). This device is also suitable for use in output buffers, voltage regulators, and timers. BJTs are three terminal devices (base, emitter, collector) that control current flow between emitter and collector, depending on the amount of current applied to the base.

When used as an amplifier, the UNR9213G0L’s collector-base junction is reverse biased and the collector-emitter junction is forward biased. This allows current flow from the emitter to the base, which is amplified and passes on to the collector. The amplifier’s gain is determined by the current flowing through the collector-base junction (Ic) divided by the current flowing through the emitter-base junction (Ib). As the collector-base junction is reverse biased, the collector current is nearly constant, which means the amplified signal is directly related to the signal input from the base.

When the UNR9213G0L is used in multiplexers, the signal coming into the base is multiplexed and the amplified signal output from the collector can drive the switching or logic circuits of the multiplexer. Similarly, a PLL circuit’s output is fed into the emitter-base junction of the transistor, while the collector is connected to a timer or a voltage regulator. The signal is then amplified, thus providing a voltage/current signal to activate the timer/regulator.

The UNR9213G0L has a maximum collector current of 100 mA, a maximum collector-emitter voltage of 30V, and a minimum breakdown voltage of 40V, making it suitable for both low and moderate power applications. The reduced gate charge rating makes it relatively easy to turn on and off and reduces power consumption in many low-power applications. Additionally, the device has high switching frequency capability that allows for fast switching in many applications.

In summary, the UNR9213G0L is a popular choice for amplifier, multiplexer, and PLL applications. It is also suitable for many low and moderate power applications such as output buffers, voltage regulators, and timers due to its relatively high collector current, collector-emitter voltage, and breakdown voltage ratings. The device also offers good switching speed, power efficiency, and a low gate charge rating, all of which make it a great choice for many applications.

The specific data is subject to PDF, and the above content is for reference

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