ZVN4525E6TA Discrete Semiconductor Products |
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Allicdata Part #: | ZVN4525E6TR-ND |
Manufacturer Part#: |
ZVN4525E6TA |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET N-CH 250V 230MA SOT-23-6 |
More Detail: | N-Channel 250V 230mA (Ta) 1.1W (Ta) Surface Mount ... |
DataSheet: | ZVN4525E6TA Datasheet/PDF |
Quantity: | 45000 |
Vgs(th) (Max) @ Id: | 1.8V @ 1mA |
Package / Case: | SOT-23-6 |
Supplier Device Package: | SOT-23-6 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1.1W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 72pF @ 25V |
Vgs (Max): | ±40V |
Gate Charge (Qg) (Max) @ Vgs: | 3.65nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 8.5 Ohm @ 500mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 2.4V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 230mA (Ta) |
Drain to Source Voltage (Vdss): | 250V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The ZVN4525E6TA is a single N-channel enhancement-mode field-effect transistor (FET) manufactured by Zetex Semiconductors. It features a low Rdson, fast switching times and ultra-low gate charge. The device is suitable for a wide range of applications, including high-side or low-side switching, TFT LCD bias supplies and low-noise amplifier circuits.
The ZVN4525E6TA is a single N-channel field-effect transistor that operates with a voltage of -25V and can endure drain-source current up to 10A. The device contains a single gate, separated from the drain and source connections by an oxide layer. The gate terminal is sensitive to changes in the voltage applied to it, effectively controlling the flow of current across the channel. When a forward bias is applied to the gate, it opens the channel, allowing electrons to flow from the source to the drain. When a reverse bias is applied to the gate, it closes the channel, preventing electron flow.
The ZVN4525E6TA has a low Rdson, or resistor equivalent value of the conduction path, of 30mW. This means that the device requires relatively low amounts of power to maintain operations. It also has a low gate charge, the amount of power needed to switch the device on or off, which is 12nC. This allows the device to switch quickly and efficiently, making it ideal for high power applications. The device is also characterized with a low total gate charge, which is the sum of the gate charge and the drain-to-source charge.
The ZVN4525E6TA is suitable for a wide range of applications, including high-side or low-side switching, TFT LCD bias supplies and low-noise amplifier circuits. It is particularly advantageous for applications which require fast switching times and low power consumption, such as in battery powered applications. The device is also especially useful for applications which require ultra-low switching noise, due to its low Rdson and gate charge characteristics.
The ZVN4525E6TA is a single N-channel enhancement-mode field-effect transistor manufactured by Zetex Semiconductors. It features a low Rdson, fast switching times, and ultra-low gate charge, making it suitable for a wide range of applications. It is especially useful for applications which require fast switching times, low power consumption, or ultra-low switching noise.
The specific data is subject to PDF, and the above content is for reference
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