16-bit input expander - Allicdata Electronics

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Allicdata Part#	Mft.Part#	Company	Spec.	QTY.	Pricing(USD)
ZVN0124A-ND	ZVN0124A	Diodes Incorporated	View more Packaging: Bulk Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 240V Current - Continuous Drain (Id) @ 25C: 160mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 16 Ohm @ 250mA, 10V Vgs(th) (Max) @ Id: 3V @ 1mA Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 85pF @ 25V Power Dissipation (Max): 700mW (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA)	3925 Order	--
1727-7208-2-ND	PSMN016-100BS,1 18	Nexperia USA Inc.	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 57A (Tj) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 16 mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 49nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 2404pF @ 50V Power Dissipation (Max): 148W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	6400 Order	800+: $0.4993
SUD50N03-16P-GE 3-ND	SUD50N03-16P-GE 3	Vishay Siliconix	View more Series: TrenchFET Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 16 mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 3V @ 250A Gate Charge (Qg) (Max) @ Vgs: 13nC @ 4.5V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 25V Power Dissipation (Max): 6.5W (Ta), 40.8W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252, (D-Pak) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	1+: $0
IRLR8503PBFTR-N D	IRLR8503TRPBF	Infineon Technologies	View more Series: HEXFET Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 44A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 16 mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 3V @ 250A Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1650pF @ 25V Power Dissipation (Max): 62W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	1+: $0
IXFL210N30P3-ND	IXFL210N30P3	IXYS	View more Series: HiPerFET, Polar3 Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 300V Current - Continuous Drain (Id) @ 25C: 108A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 16 mOhm @ 105A, 10V Vgs(th) (Max) @ Id: 5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 268nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 16200pF @ 25V Power Dissipation (Max): 520W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: ISOPLUS264 Package / Case: ISOPLUS264	60 Order	1+: $17.5014 25+: $14.8784 100+: $13.8281
DMG4435SSS-13DI TR-ND	DMG4435SSS-13	Diodes Incorporated	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 7.3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V, 20V Rds On (Max) @ Id, Vgs: 16 mOhm @ 11A, 20V Vgs(th) (Max) @ Id: 2.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 35.4nC @ 10V Vgs (Max): 25V Input Capacitance (Ciss) (Max) @ Vds: 1614pF @ 15V Power Dissipation (Max): 2.5W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Package / Case: 8-SOIC (0.154", 3.90mm Width)	1000 Order	--
1727-4651-ND	PHP79NQ08LT,127	Nexperia USA Inc.	View more Series: TrenchMOS Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25C: 73A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 16 mOhm @ 25A, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 5V Vgs (Max): 15V Input Capacitance (Ciss) (Max) @ Vds: 3026pF @ 25V Power Dissipation (Max): 157W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	3979 Order	1+: $0.8316 50+: $0.6635 100+: $0.5806 500+: $0.4503 1000+: $0.3555
FQP90N08-ND	FQP90N08	ON Semiconductor	View more Series: QFET Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25C: 71A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 16 mOhm @ 35.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V Vgs (Max): 25V Input Capacitance (Ciss) (Max) @ Vds: 3250pF @ 25V Power Dissipation (Max): 160W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	1000 Order	--
DMP1022UFDE-7DI TR-ND	DMP1022UFDE-7	Diodes Incorporated	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25C: 9.1A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Rds On (Max) @ Id, Vgs: 16 mOhm @ 8.2A, 4.5V Vgs(th) (Max) @ Id: 800mV @ 250A Gate Charge (Qg) (Max) @ Vgs: 42.6nC @ 5V Vgs (Max): 8V Input Capacitance (Ciss) (Max) @ Vds: 2953pF @ 4V Power Dissipation (Max): 660mW (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: U-DFN2020-6 (Type E) Package / Case: 6-UDFN Exposed Pad	1000 Order	--
FDMA8878TR-ND	FDMA8878	ON Semiconductor	View more Series: PowerTrench Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 9A (Ta), 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 16 mOhm @ 9A, 10V Vgs(th) (Max) @ Id: 3V @ 250A Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 720pF @ 15V Power Dissipation (Max): 2.4W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-MicroFET (2x2) Package / Case: 6-VDFN Exposed Pad	3000 Order	--
IRL3714ZSPBF-ND	IRL3714ZSPBF	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 36A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 16 mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2.55V @ 250A Gate Charge (Qg) (Max) @ Vgs: 7.2nC @ 4.5V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 10V Power Dissipation (Max): 35W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	1000 Order	--
FDD16AN08A0_NF0 54-ND	FDD16AN08A0_NF0 54	ON Semiconductor	View more Series: UltraFET Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25C: 9A (Ta), 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 16 mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1874pF @ 25V Power Dissipation (Max): 135W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	1+: $0
497-16198-5-ND	STD1NK80Z-1	STMicroelectronics	View more Series: SuperMESH Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25C: 1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 16 Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 4.5V @ 50A Gate Charge (Qg) (Max) @ Vgs: 7.7nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 160pF @ 25V Power Dissipation (Max): 45W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: I-PAK Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	2995 Order	1+: $0.8505 75+: $0.6816 150+: $0.5964 525+: $0.4625 1050+: $0.3651
DMT6016LPS-13DI TR-ND	DMT6016LPS-13	Diodes Incorporated	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 10.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 16 mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 864pF @ 30V Power Dissipation (Max): 1.23W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerDI5060-8 Package / Case: 8-PowerTDFN	12500 Order	2500+: $0.1617
IXFP80N25X3-ND	IXFP80N25X3	IXYS	View more Series: HiPerFET Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 16 mOhm @ 40A, 10V Vgs(th) (Max) @ Id: 4.5V @ 1.5mA Gate Charge (Qg) (Max) @ Vgs: 83nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 5430pF @ 25V Power Dissipation (Max): 390W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB (IXFP) Package / Case: TO-220-3	158 Order	1+: $4.6746 50+: $3.8319 100+: $3.4581 500+: $2.8973 1000+: $2.5234
HUFA75852G3-ND	HUFA75852G3	ON Semiconductor	View more Series: UltraFET Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 16 mOhm @ 75A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 480nC @ 20V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 7690pF @ 25V Power Dissipation (Max): 500W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	1000 Order	1+: $0
SVD5865NLT4GOST R-ND	SVD5865NLT4G	ON Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 10A (Ta), 46A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 16 mOhm @ 19A, 10V Vgs(th) (Max) @ Id: 2V @ 250A Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 25V Power Dissipation (Max): 3.1W (Ta), 71W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	7500 Order	2500+: $0.2145
BSC160N15NS5ATM A1TR-ND	BSC160N15NS5ATM A1	Infineon Technologies	View more Series: OptiMOS Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25C: 56A (Tc) Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Rds On (Max) @ Id, Vgs: 16 mOhm @ 28A, 10V Vgs(th) (Max) @ Id: 4.6V @ 60A Gate Charge (Qg) (Max) @ Vgs: 23.1nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1820pF @ 75V Power Dissipation (Max): 96W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8 Package / Case: 8-PowerTDFN	1000 Order	5000+: $0.7226
PHD38N02LT,118- ND	PHD38N02LT,118	Nexperia USA Inc.	View more Series: TrenchMOS Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 44.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V Rds On (Max) @ Id, Vgs: 16 mOhm @ 25A, 5V Vgs(th) (Max) @ Id: 1.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 15.1nC @ 5V Vgs (Max): 12V Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 20V Power Dissipation (Max): 57.6W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	10000+: $0.1357
IRL3714ZL-ND	IRL3714ZL	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 36A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 16 mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2.55V @ 250A Gate Charge (Qg) (Max) @ Vgs: 7.2nC @ 4.5V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 10V Power Dissipation (Max): 35W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, IPak, TO-262AA	1000 Order	--
FDP65N06-ND	FDP65N06	ON Semiconductor	View more Series: UniFET Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 65A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 16 mOhm @ 32.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 2170pF @ 25V Power Dissipation (Max): 135W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	1570 Order	--
FDI2532-ND	FDI2532	ON Semiconductor	View more Series: PowerTrench Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25C: 8A (Ta), 79A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 16 mOhm @ 33A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 107nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 5870pF @ 25V Power Dissipation (Max): 310W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAK (TO-262) Package / Case: TO-262-3 Long Leads, IPak, TO-262AA	1000 Order	--
DMT6016LFDF-7DI TR-ND	DMT6016LFDF-7	Diodes Incorporated	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 8.9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 16 mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 3V @ 250A Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 864pF @ 30V Power Dissipation (Max): 820mW (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-UDFN (2x2) Package / Case: 6-UDFN Exposed Pad	15000 Order	3000+: $0.146
IRFIZ48N-ND	IRFIZ48N	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25C: 36A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 16 mOhm @ 22A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 89nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 25V Power Dissipation (Max): 42W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Full-Pak Package / Case: TO-220-3 Full Pack	1000 Order	--
NTP60N06LGOS-ND	NTP60N06LG	ON Semiconductor	View more Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 60A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Rds On (Max) @ Id, Vgs: 16 mOhm @ 30A, 5V Vgs(th) (Max) @ Id: 2V @ 250A Gate Charge (Qg) (Max) @ Vgs: 65nC @ 5V Vgs (Max): 15V Input Capacitance (Ciss) (Max) @ Vds: 3075pF @ 25V Power Dissipation (Max): 2.4W (Ta), 150W (Tj) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	1000 Order	--
NTB60N06LT4GOST R-ND	NTB60N06LT4G	ON Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 60A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Rds On (Max) @ Id, Vgs: 16 mOhm @ 30A, 5V Vgs(th) (Max) @ Id: 2V @ 250A Gate Charge (Qg) (Max) @ Vgs: 65nC @ 5V Vgs (Max): 15V Input Capacitance (Ciss) (Max) @ Vds: 3075pF @ 25V Power Dissipation (Max): 2.4W (Ta), 150W (Tj) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	1000 Order	1+: $0
SUD50N03-16P-E3 -ND	SUD50N03-16P-E3	Vishay Siliconix	View more Series: TrenchFET Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 16 mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 3V @ 250A Gate Charge (Qg) (Max) @ Vgs: 13nC @ 4.5V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 25V Power Dissipation (Max): 6.5W (Ta), 40.8W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252, (D-Pak) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	--
917-1080-2-ND	EPC2016C	EPC	View more Series: eGaN Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 18A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Rds On (Max) @ Id, Vgs: 16 mOhm @ 11A, 5V Vgs(th) (Max) @ Id: 2.5V @ 3mA Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 5V Vgs (Max): +6V, -4V Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 50V Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: Die Package / Case: Die	492500 Order	--
SPB70N10L-ND	SPB70N10L	Infineon Technologies	View more Series: SIPMOS Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 70A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 16 mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 2V @ 2mA Gate Charge (Qg) (Max) @ Vgs: 240nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 4540pF @ 25V Power Dissipation (Max): 250W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3-2 Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	1000 Order	--
DMP2021UFDF-13D I-ND	DMP2021UFDF-13	Diodes Incorporated	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Rds On (Max) @ Id, Vgs: 16 mOhm @ 7A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250A Gate Charge (Qg) (Max) @ Vgs: 59nC @ 8V Vgs (Max): 8V Input Capacitance (Ciss) (Max) @ Vds: 2760pF @ 15V Power Dissipation (Max): 730mW (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: U-DFN2020-6 (Type F) Package / Case: 6-UDFN Exposed Pad	1000 Order	10000+: $0.1927
568-9679-2-ND	BUK9618-55A,118	NXP USA Inc	View more Series: TrenchMOS Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25C: 61A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 16 mOhm @ 25A, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 34nC @ 5V Vgs (Max): 15V Input Capacitance (Ciss) (Max) @ Vds: 2210pF @ 25V Power Dissipation (Max): 136W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	1000 Order	1+: $0
SUM50N06-16L-E3 CT-ND	SUM50N06-16L-E3	Vishay Siliconix	View more Series: TrenchFET Packaging: Cut Tape (CT) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 16 mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 3V @ 250A Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1325pF @ 25V Power Dissipation (Max): 3.7W (Ta), 93W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2Pak) Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	1000 Order	1+: $0
IRL3714ZSTRR-ND	IRL3714ZSTRR	Infineon Technologies	View more Series: HEXFET Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 36A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 16 mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2.55V @ 250A Gate Charge (Qg) (Max) @ Vgs: 7.2nC @ 4.5V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 10V Power Dissipation (Max): 35W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	1000 Order	1+: $0
DMG4468LK3-13DI TR-ND	DMG4468LK3-13	Diodes Incorporated	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 9.7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 16 mOhm @ 11.6A, 10V Vgs(th) (Max) @ Id: 1.95V @ 250A Gate Charge (Qg) (Max) @ Vgs: 18.85nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 867pF @ 15V Power Dissipation (Max): 1.68W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	2500 Order	--
FDU6030BL-ND	FDU6030BL	ON Semiconductor	View more Series: PowerTrench Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 10A (Ta), 42A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 16 mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 3V @ 250A Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1143pF @ 15V Power Dissipation (Max): 3.8W (Ta), 50W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: IPAK (TO-251) Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	1000 Order	1+: $0
HAT2140H-EL-E-N D	HAT2140H-EL-E	Renesas Electronics America	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 25A (Ta) Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Rds On (Max) @ Id, Vgs: 16 mOhm @ 12.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 105nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 6500pF @ 10V Power Dissipation (Max): 30W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK Package / Case: SC-100, SOT-669	1000 Order	--
NVD5C486NLT4G-N D	NVD5C486NLT4G	ON Semiconductor	View more Series: Automotive, AEC-Q101 Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25C: 9.8A (Ta), 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 16 mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.2V @ 20A Gate Charge (Qg) (Max) @ Vgs: 9.8nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 25V Power Dissipation (Max): 2.9W (Ta), 18W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	2500+: $0.1786
IPD16CNE8NG-ND	IPD16CNE8N G	Infineon Technologies	View more Series: OptiMOS Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 85V Current - Continuous Drain (Id) @ 25C: 53A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 16 mOhm @ 53A, 10V Vgs(th) (Max) @ Id: 4V @ 61A Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 3230pF @ 40V Power Dissipation (Max): 100W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	1+: $0
568-9736-5-ND	BUK9518-55A,127	Nexperia USA Inc.	View more Series: TrenchMOS Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25C: 61A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 16 mOhm @ 25A, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 34nC @ 5V Vgs (Max): 15V Input Capacitance (Ciss) (Max) @ Vds: 2210pF @ 25V Power Dissipation (Max): 136W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	1000 Order	1+: $0
SI4776DY-T1-GE3 TR-ND	SI4776DY-T1-GE3	Vishay Siliconix	View more Series: SkyFET, TrenchFET Packaging: Tape & Reel (TR) Part Status: Last Time Buy FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 11.9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 16 mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 17.5nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 521pF @ 15V Power Dissipation (Max): 4.1W (Tc) Operating Temperature: -55C ~ 150C (TA) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	7500 Order	--

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