SUD50N03-16P-E3 Allicdata Electronics
Allicdata Part #:

SUD50N03-16P-E3-ND

Manufacturer Part#:

SUD50N03-16P-E3

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 30V TO252
More Detail: N-Channel 30V 6.5W (Ta), 40.8W (Tc) Surface Mount...
DataSheet: SUD50N03-16P-E3 datasheetSUD50N03-16P-E3 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 3V @ 250µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252, (D-Pak)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 6.5W (Ta), 40.8W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 4.5V
Series: TrenchFET®
Rds On (Max) @ Id, Vgs: 16 mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: --
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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SUD50N03-16P-E3 are a type of FETs (Field Effect Transistor), more specifically MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistor). These components are characterized as being single, meaning they consist of only one active region or terminal that can be controlled by a signal applied to an additional terminal. This type of FET is often used to construct integrated circuits with the intention of providing voltage gain, amplification, and signal switching.

Due to their high input impedance, low output impedance, and low gain making them ideal for constructing power MOSFETs, their usage has found favour in a range of integrated circuits, such as power ICs. As such, they are often used in power applications, such as motor controllers and DC-DC converters. Moreover, due to their reasonably low on-state resistance they are also advocated for being used in power amplifiers, such as automotive audio systems and high-power PA systems.

The SUD50N03-16P-E3 works primarily by having a source, gate and drain terminals, just like any other MOSFETs. As electrons move through the source and drain channels, known as channels, the size of the channels can be varied by applying an electrical signal to the gate terminal. When the gate voltage is increased, electrons can become trapped in the gate, causing an increase in the resulting voltage through the channels, thus controlling the amount of current that is allowed to flow between the source and the drain.

Additionally, the gate voltage may be used in the form of PWM (pulse-width modulation) in order to control the on/off times from the source to the drain, resulting in a modulation of the current. Since electrons in the gate of the MOSFET can be stored for up to a few seconds, the SUD50N03-16P-E3 can be used in a variety of applications, where switching rapidly between low and high currents is advantageous, such as switching motor speeds or increasing output power of an amplifier. As such, the SUD50N03-16P-E3 is used in a number of applications requiring a fast switching action, such as in motor controllers and server systems, but their usage can also be found in everyday items such as computers, radios and cell phones.

In conclusion, the SUD50N03-16P-E3 are a type of single MOSFETs, intended for use in applications requiring power switching, such as motor controllers and power amplifiers. They can be utilized for their low on-state resistance, allowing for heightened performance when controlling high magnitude currents. Furthermore, their capability to store electrons on their gates can be used as an advantage for rapidly switching between low and high currents. Their usage is quite common in a variety of industries, such as automotive and audio, but their application can also be found in everyday electronics, such as household appliances and communication devices.

The specific data is subject to PDF, and the above content is for reference

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