Allicdata Part #: | SUD50N03-16P-E3-ND |
Manufacturer Part#: |
SUD50N03-16P-E3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 30V TO252 |
More Detail: | N-Channel 30V 6.5W (Ta), 40.8W (Tc) Surface Mount... |
DataSheet: | SUD50N03-16P-E3 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | TO-252, (D-Pak) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 6.5W (Ta), 40.8W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1150pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 13nC @ 4.5V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 16 mOhm @ 15A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | -- |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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SUD50N03-16P-E3 are a type of FETs (Field Effect Transistor), more specifically MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistor). These components are characterized as being single, meaning they consist of only one active region or terminal that can be controlled by a signal applied to an additional terminal. This type of FET is often used to construct integrated circuits with the intention of providing voltage gain, amplification, and signal switching.
Due to their high input impedance, low output impedance, and low gain making them ideal for constructing power MOSFETs, their usage has found favour in a range of integrated circuits, such as power ICs. As such, they are often used in power applications, such as motor controllers and DC-DC converters. Moreover, due to their reasonably low on-state resistance they are also advocated for being used in power amplifiers, such as automotive audio systems and high-power PA systems.
The SUD50N03-16P-E3 works primarily by having a source, gate and drain terminals, just like any other MOSFETs. As electrons move through the source and drain channels, known as channels, the size of the channels can be varied by applying an electrical signal to the gate terminal. When the gate voltage is increased, electrons can become trapped in the gate, causing an increase in the resulting voltage through the channels, thus controlling the amount of current that is allowed to flow between the source and the drain.
Additionally, the gate voltage may be used in the form of PWM (pulse-width modulation) in order to control the on/off times from the source to the drain, resulting in a modulation of the current. Since electrons in the gate of the MOSFET can be stored for up to a few seconds, the SUD50N03-16P-E3 can be used in a variety of applications, where switching rapidly between low and high currents is advantageous, such as switching motor speeds or increasing output power of an amplifier. As such, the SUD50N03-16P-E3 is used in a number of applications requiring a fast switching action, such as in motor controllers and server systems, but their usage can also be found in everyday items such as computers, radios and cell phones.
In conclusion, the SUD50N03-16P-E3 are a type of single MOSFETs, intended for use in applications requiring power switching, such as motor controllers and power amplifiers. They can be utilized for their low on-state resistance, allowing for heightened performance when controlling high magnitude currents. Furthermore, their capability to store electrons on their gates can be used as an advantage for rapidly switching between low and high currents. Their usage is quite common in a variety of industries, such as automotive and audio, but their application can also be found in everyday electronics, such as household appliances and communication devices.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
SUD50N03-06AP-T4E3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 30V 90A TO252... |
SUD50N06-07L-E3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 60V 96A TO252... |
SUD50P04-13L-E3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 40V 60A TO252... |
SUD50P10-43L-GE3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 100V 37.1A TO... |
SUD50N02-04P-E3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 20V 50A DPAKN... |
SUD50N02-09P-E3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 20V DPAKN-Cha... |
SUD50N06-07L-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 60V 96A DPAKN... |
SUD50N10-18P-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 100V 8.2A DPA... |
SUD50P04-13L-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET P-CH 40V 60A DPAKP... |
SUD50N025-06P-E3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 25V 78A TO252... |
SUD50N03-06P-E3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 30V 84A TO252... |
SUD50N03-09P-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 30V 63A TO252... |
SUD50N03-11-E3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 30V 50A TO252... |
SUD50N03-12P-E3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 30V TO252N-Ch... |
SUD50N03-16P-E3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 30V TO252N-Ch... |
SUD50N03-16P-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 30V TO252N-Ch... |
SUD50N04-05L-E3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 40V 115A TO25... |
SUD50N04-16P-E3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 40V 9.8A TO25... |
SUD50N04-37P-T4-E3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 40V 5.4A TO25... |
SUD50N10-18P-E3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 100V 8.2A TO2... |
SUD50N10-34P-T4-E3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 100V 5.9A TO2... |
SUD50P04-23-E3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 40V 8.2A TO25... |
SUD50P04-23-GE3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 40V 8.2A TO25... |
SUD50P04-40P-T4-E3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET P-CH 40V 6A TO252P... |
SUD50P08-26-E3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET P-CH 80V 50A TO252... |
SUD50P10-43-E3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET P-CH 100V 38A TO25... |
SUD50N02-09P-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 20V 20A TO252... |
SUD50N03-12P-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 30V 16.8A TO2... |
SUD50P04-09L-E3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 40V 50A TO252... |
SUD50N02-06P-E3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 20V 50A TO252... |
SUD50P04-08-GE3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 40V 50A DPAKP... |
SUD50P08-25L-E3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 80V 50A DPAKP... |
SUD50P06-15L-E3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 60V 50A TO252... |
SUD50P10-43L-E3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 100V 37.1A TO... |
SUD50N06-09L-E3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 60V 50A TO252... |
SUD50N03-06AP-E3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 30V 90A TO252... |
SUD50N03-09P-E3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 30V 63A TO252... |
SUD50NP04-77P-T4E3 | Vishay Silic... | 0.44 $ | 1000 | MOSFET N/P-CH 40V 8A TO25... |
SUD50N024-09P-E3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 22V 49A TO252... |
SUD50N04-8M8P-4GE3 | Vishay Silic... | -- | 25000 | MOSFET N-CH 40V 14A TO-25... |
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