DMT6016LPS-13

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The DMT6016LPS-13 is a MOSFET (Metal-Oxide Semiconductor Field-Effect Transistor) designed for use in various power applications. It is a single N-channel enhancement type MOSFET with a maximum drain-source voltage of 20V and a maximum drain current of 16A. It is built with an advanced vertical double-diffused planar technology, making it suitable for use in low on-resistance applications, such as motor drivers and audio amplifiers.

The DMT6016LPS-13 features two main components which provide the power transfer ability. A gate, known as the control terminal, is connected to the source terminal, which is connected to the drain. This setup forms a source-gate-drain construction, which is extremely common in MOSFETs. When a positive voltage is applied to the gate, an electric field is generated between the source and drain. This electric field can be used to control the current flow between the two terminals, thus allowing the device to be used as an electronic switch.

The DMT6016LPS-13 is ideal for use in power applications due to its high voltage and power handling capacity. It is well suited for use in motor drivers and audio amplifiers, as well as other applications where high power (up to 16A) and low on-resistance (<0.0017Ω) are required. It can also be used in various power supplies and regulators due to its low on-resistance and its ability to quickly switch from high-system count to low-system count, thereby allowing for precise voltage control. Due to its robust construction, it is also suitable for use in automotive applications.

The DMT6016LPS-13 is a high performing device and is noted for its reliability and longevity. As with all other MOSFETs, it is important to keep it correctly bias-loaded and to reduce its temperature through the use of adequate heatsinking. Additionally, it is important to note that the device have a maximum breakdown voltage of 20V and is not suitable for use in applications that require higher voltages, such as logic circuits and some motor control applications.

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