IRL3714ZSPBF

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The IRL3714ZSPBF is a N-channel enhancement-mode power MOSFET. It is characterized by high current and low on resistance, and is suitable for use in switching, amplifier and otherPower Control applications. As a power MOSFET, its high current and low on resistance capability makes it ideal for high power, low voltage applications.

IRL3714ZSPBF is a 175 mΩ Unipolar N-Channel Power MOSFET with a breakdown voltage, Vds, of 57 Volts. It has an absolute maximum drain-source voltage of 175V, a continuous drain current of 75V of 225A, an on resistance of 12ohm, a maximum power dissipation of 403W, ambient temperature range of -55°C to 150°C and a thermal resistance in both directions of 1.3°C/W.

The IRL3714ZSPBF is fabricated using advanced power MOSFET processes that provide 100% avalanche-rated performance. This unique process makes it possible to integrate the precise control necessary for high switching performance while maintaining low resistance. It has an optimized low gate charge (Qg) which allows the designer to reduce gate drive power loss and thus prevents thermal runaway.

The IRL3714ZSPBF is typically used in switching applications, such as DC/DC converters, SMPS, voltage regulators, motor/fan/actuator control, as well as other power control applications. Its optimized package technology allows it to fit in slim line designs, while maintaining thermal dissipation and allowing much higher currents in a given compact package size.

The IRL3714ZSPBF\'s working principle is based on the principle of a field effect transistor (FET). The need for two electrical contacts to control a current is eliminated by using the gate voltage to control current flow through the MOSFET. The basic idea behind a MOSFET is that the current flow through the channel between source and drain can be controlled by the electric field between the gate and source. A small voltage applied between the gate and source induces a channel that allows current to flow through it.

The IRL3714ZSPBF is constructed from a PN-junction between two N-type layers, with the gate electrode connected to a metallic layer built on the surface of the PN-junction. The electric field between the gate electrode and the surface channel creates a region of depleted regions. This creates an effective barrier at the surface which prevents the flow of electrons through the channel when the gate voltage is low, but allows current flow when a higher voltage is applied to the gate. In addition, the PN-junction also defines the drain voltage level.

The IRL3714ZSPBF is ideal for Power Control applications as its high current, low on resistance and avalanche-rated performance allow it to switch high power at low voltages with ease. Its optimized package technology also makes it suitable for slim line designs, making it ideal for applications where space and efficiency are of utmost importance.

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