NVD5C486NLT4G

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The NVD5C486NLT4G is a N-Channel 50V, CNE (Continuous Normal Mode) Enhancement Mode MOSFET that features extremely low on-resistance FETs. These devices also feature a low threshold voltage and low input capacitance. The NVD5C486NLT4G is fabricated using a unique process to give them a high speed switching performance and a rugged design, making them ideal for power supply regulation, power MOSFET and high frequency circuit applications.

The NVD5C486NLT4G is fabricated using a high-voltage process and has an N-channel to reduce conduction time and input capacitance. Its normally open (N-type) FET design delivers excellent ESD protection, making it suitable for any type of environmental application. The device also has a high temperature operating range, making it suitable for applications requiring increased operating temperatures or thermal cycling.

At its core, the NVD5C486NLT4G is a simplified FET, with just two terminals, an ‘N’ terminal and a ‘G’ terminal (for gate). In order to use the device, it must be addressed with a voltage signal, either when initially supplied with a negative pulse to the gate terminal or when switched between two potential voltages. In essence, the FET works by enabling current to flow through it when a certain voltage is applied to the gate. This voltage is known as the ‘threshold voltage’ and when this is reached, the FET will be ‘on’, allowing current to flow. When it is reduced again, the FET will be ‘off’, halting the current flow.

The NVD5C486NLT4G is typically used in pulse-width modulation (PWM) circuits, where the FET is used to switch the power supply output for a variety of applications. These may include motor control, PC and audio applications, communications and automotive systems. The device can also be used in any power switch application where low on-resistance is required, such as in DC-DC converters, class-D amplifiers and high-side switching applications.

The NVD5C486NLT4G’s characteristics makes it suitable for high-side switching due to its low input capacitance, enabling high-speed switching of large AC and DC currents. It is also well-suited for power supply regulation due to its high frequency operation and low RDS(on) (resistance drain-source on) ensuring efficient operation and superior power saving performance. Its sturdy construction also allows for operation at high frequencies, enabling it to be used in many applications that require fast switching.

In summary, the NVD5C486NLT4G is an N-Channel 50V, CNE (Continuous Normal Mode) Enhancement Mode MOSFET that features extremely low on-resistance FETs, a low threshold voltage and low input capacitance. It is typically used in pulse-width modulation (PWM) circuits, motor control, PC and audio applications, communications, automotive systems, DC-DC converters, class-D amplifiers and high-side switching applications, due to its low input capacitance and high frequency operation. Its high temperature operating range and rugged design also makes it suitable for a range of environmental applications.

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