HUFA75852G3 Allicdata Electronics
Allicdata Part #:

HUFA75852G3-ND

Manufacturer Part#:

HUFA75852G3

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 150V 75A TO-247
More Detail: N-Channel 150V 75A (Tc) 500W (Tc) Through Hole TO-...
DataSheet: HUFA75852G3 datasheetHUFA75852G3 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-247-3
Supplier Device Package: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 500W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 7690pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 480nC @ 20V
Series: UltraFET™
Rds On (Max) @ Id, Vgs: 16 mOhm @ 75A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Drain to Source Voltage (Vdss): 150V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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FETs, or field-effect transistors, are semiconductor devices which can vary their conductivity with the presence of an electric field. They are widely used in electronics as amplifiers, switches, and modulators for both analog and digital signals. These devices typically operate at lower power levels than their transistor counterparts. The HUFA75852G3 is a single FET designed for use in applications such as power switching, amplifiers, and digital logic circuits.

The HUFA75852G3 is a medium-power, single-FET device, with a fast and reliable switching time. It has a drain-to-source breakdown voltage (BVDSS) rating of ?60V, which means it can handle high voltage levels, and a drain-to-source On-Resistance (RDS) of 2.3ohms, which makes it very efficient in power switching applications. It also has a maximum continuous drain current rating of 8A, making it suitable for use in power switch circuit designs, where high currents and low voltages are required.

The HUFA75852G3 is a N-channel FET, meaning it is designed to switch on with a positive gate voltage. This means it is great for positive voltage applications, such as power switching, but it cannot be used for negative voltage applications. The device is also designed with a low input capacitance, to reduce the amount of power it consumes when it is in an "On" state. This makes it very efficient in power switching applications where power dissipation is an issue.

The HUFA75852G3 has an operating temperature range of -55°C to 150°C and is rated for up to 200V of reverse voltage in its "off" state. It is also very robust, withstanding up to 10,000 switching cycles. This makes it a great choice for applications which require high reliability, such as in safety-critical systems or aerospace applications.

The working principle behind the HUFA75852G3 is relatively simple. The application of voltage across the gate and source of the FET creates an electric field which induces a current in the device, turning it "on". When the voltage is removed, the current stops flowing, and the FET switches "off". This makes the HUFA75852G3 great for applications where repeated and reliable on/off switching of electrical current is required.

The HUFA75852G3 is a versatile and reliable FET, suited for a wide range of applications. It is commonly used in power switching and digital logic circuits, but it can also be used in analog and digital signal modulation, thanks to its low-power operation and fast switching times. Its wide range of ratings makes it great for applications where high voltage and current levels are required, as well as those which require high reliability. The HUFA75852G3 is a reliable choice for any power switching application.

The specific data is subject to PDF, and the above content is for reference

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