Allicdata Part #: | HUFA75852G3-ND |
Manufacturer Part#: |
HUFA75852G3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 150V 75A TO-247 |
More Detail: | N-Channel 150V 75A (Tc) 500W (Tc) Through Hole TO-... |
DataSheet: | HUFA75852G3 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | UltraFET™ |
Packaging: | Tube |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 150V |
Current - Continuous Drain (Id) @ 25°C: | 75A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 16 mOhm @ 75A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 480nC @ 20V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 7690pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 500W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-247-3 |
Package / Case: | TO-247-3 |
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FETs, or field-effect transistors, are semiconductor devices which can vary their conductivity with the presence of an electric field. They are widely used in electronics as amplifiers, switches, and modulators for both analog and digital signals. These devices typically operate at lower power levels than their transistor counterparts. The HUFA75852G3 is a single FET designed for use in applications such as power switching, amplifiers, and digital logic circuits.
The HUFA75852G3 is a medium-power, single-FET device, with a fast and reliable switching time. It has a drain-to-source breakdown voltage (BVDSS) rating of ?60V, which means it can handle high voltage levels, and a drain-to-source On-Resistance (RDS) of 2.3ohms, which makes it very efficient in power switching applications. It also has a maximum continuous drain current rating of 8A, making it suitable for use in power switch circuit designs, where high currents and low voltages are required.
The HUFA75852G3 is a N-channel FET, meaning it is designed to switch on with a positive gate voltage. This means it is great for positive voltage applications, such as power switching, but it cannot be used for negative voltage applications. The device is also designed with a low input capacitance, to reduce the amount of power it consumes when it is in an "On" state. This makes it very efficient in power switching applications where power dissipation is an issue.
The HUFA75852G3 has an operating temperature range of -55°C to 150°C and is rated for up to 200V of reverse voltage in its "off" state. It is also very robust, withstanding up to 10,000 switching cycles. This makes it a great choice for applications which require high reliability, such as in safety-critical systems or aerospace applications.
The working principle behind the HUFA75852G3 is relatively simple. The application of voltage across the gate and source of the FET creates an electric field which induces a current in the device, turning it "on". When the voltage is removed, the current stops flowing, and the FET switches "off". This makes the HUFA75852G3 great for applications where repeated and reliable on/off switching of electrical current is required.
The HUFA75852G3 is a versatile and reliable FET, suited for a wide range of applications. It is commonly used in power switching and digital logic circuits, but it can also be used in analog and digital signal modulation, thanks to its low-power operation and fast switching times. Its wide range of ratings makes it great for applications where high voltage and current levels are required, as well as those which require high reliability. The HUFA75852G3 is a reliable choice for any power switching application.
The specific data is subject to PDF, and the above content is for reference
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