IRL3714ZSTRR

Vgs(th) (Max) @ Id:	2.55V @ 250µA
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:	D2PAK
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	35W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	550pF @ 10V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	7.2nC @ 4.5V
Series:	HEXFET®
Rds On (Max) @ Id, Vgs:	16 mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	36A (Tc)
Drain to Source Voltage (Vdss):	20V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Introduction to IRL3714ZSTRR

The IRL3714ZSTRR is an advanced integrated circuit (IC) transistor form factor of the IRL3714 family. This component is a member of an N-channel MOSFET (Metal–Oxide–Semiconductor Field-Effect Transistor) component family. The device is manufactured using and is available in both through-hole and surface mounted case versions and is typically used as an analog signal pre-driver, as a power switch, or as a level converter.

Application Field

The IRL3714ZSTRR is primarily used as a signal pre-driver and level converter. This device has a wide range of applications including signal pre-drivers in automotive systems, sub-system level lifting and pulling, computer interface, telecommunications signal conditioning and interface, power switching in industrial applications, and level conversion for signal integration.The device is also used in consumer applications, such as consumer electronics and personal communication devices. It is well suited for audio pre-amplification, radio frequency (RF) signal amplification and switching, and sensor signal pre-amplification. In addition, it is used in automotive vehicles for signal conditioning, driver circuits, and level conversion.

Working Principle

The IRL3714ZSTRR is an N-channel, direct-coupled, and symmetrical MOSFET. It has high forward-blocking capability and is suitable for high current handling. It also has a low on-state resistance (RDS(on)) for low power consumption and low heat dissipation. The device is able to operate in either an enhancement mode or depletion mode and has a high voltage capability. The device is designed with a high level of immunity to electromagnetic interference (EMI).The IRL3714ZSTRR works by controlling the flow of current between source and drain contacts. When a positive voltage is applied to the gate, a channel is created across the n-type substrate and electrons flow freely between source and drain. The on-state resistance (RDS(on)) is determined by the width of the channel. When the voltage is removed, the channel is closed and the MOSFET is in the off-state. Compared to other MOSFETs, the IRL3714ZSTRR offers improved performance, better switching response and higher voltage breakdown, making it suitable for high current, high frequency applications.

Conclusion

The IRL3714ZSTRR is an integrated circuit device and a member of the IRL3714 family. It is a N-channel MOSFET transistor, primarily used as a signal pre-driver and level converter. It is designed with a high level of immunity to EMI and offers improved performance, better switching response, and higher voltage breakdown. It is suitable for high current, high frequency applications and is well suited for audio pre-amplification, radio frequency signal amplification and switching, and sensor signal pre-amplification.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description