SUD50N03-16P-GE3

Vgs(th) (Max) @ Id:	3V @ 250µA
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:	TO-252, (D-Pak)
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	6.5W (Ta), 40.8W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1150pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	13nC @ 4.5V
Series:	TrenchFET®
Rds On (Max) @ Id, Vgs:	16 mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	--
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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The SUD50N03-16P-GE3 is a high voltage N-channel metal-oxide-semiconductor field-effect transistor (MOSFET). This device was designed in order to satisfy the need for high voltage and high speed switching, as well as to meet the necessary thermal stresses and endurance requirements of automotive applications. Additionally, this device offers a low on-resistance design and is suitable for operation at high frequencies. In other words, this device is often used in various automotive and industrial applicationsThe SUD50N03-16P-GE3 is a high voltage N-channel device with very low drain-source RDS(on), and features a maximum drain-source breakdown voltage of 500 V (VDSS). This device has a wide gate-source voltage range (VGS) of -30 to +30 V, a low gate charge (Qgs) of 14 nC, and a gate drive current of 15 A. To ensure proper operation, it should not be exposed to voltages greater than its VDSS rating.The SUD50N03-16P-GE3 is a three-terminal device consisting of Source, Drain, and Gate inputs. In its working principle, the MOSFET functions as a voltage-controlled current flow. The output characteristics (drain-source current versus drain-source voltage) of this device can be controlled by varying the voltage at the Gate input. It should be noted that the Gate-Source voltage (VGS) must be greater than the gate threshold voltage (VTH) to enable current flow through the device. For example, when the gate voltage is sufficiently above the threshold voltage, the drain-source current will be confined in the channel region below the channel threshold voltage. Moreover, the higher the gate voltage, the more the current will be confined, resulting in a greater current flow through the device. In addition to its application in automotive and industrial applications, the SUD50N03-16P-GE3 is also commonly used in power supplies, voltage converters, motor controls, high-frequency applications, and DC/DC converters. Its high voltage, wide frequency range and low on-resistance make it an ideal power switch for these kinds of applications. The SUD50N03-16P-GE3 is designed to offer high switching speeds, making it an ideal choice for high-speed switching applications. The device can operate up to 600 kHz, allowing higher frequency applications to be implemented. It can also be used in power saving designs to help reduce power consumption. The SUD50N03-16P-GE3 is highly reliable and robust due to its construction, which includes a thick gate oxide layer, a low gate-drain capacitance (Cgd) and a low drain-source capacitance (Cds). This ensures that it is able to withstand prolonged operating conditions, even under high temperature and voltage conditions. The SUD50N03-16P-GE3 is typically used in a variety of applications, including switching power supplies, DC/DC converters, motor controls, high-frequency applications, and voltage converters. It is a valuable component of these applications due to its high voltage, wide frequency range and low on-resistance design. The SUD50N03-16P-GE3 is designed to offer high switching speeds, making it an ideal choice for high-speed switching applications, while also ensuring robust and reliable operation.

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