PSMN016-100BS,118

Vgs(th) (Max) @ Id:	4V @ 1mA
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:	D2PAK
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	148W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	2404pF @ 50V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	49nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	16 mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	57A (Tj)
Drain to Source Voltage (Vdss):	100V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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This document describes the application field and working principle of the PSMN016-100BS,118 Transistors - FETs, MosFETs - Single. The PSMN016-100BS,118 is a "single" MosFET. It is a highly efficient device that works by operating the channel or ability to drive electrical current from Source to Drain when the Gate is controlled. This type of transistor is typically used in applications where lower power is required, such as in power management for mobile phones and digital cameras, for voltage regulation and power switching in audio amplifiers and for switching between two different signals in various types of digital communications.As a MosFET, the PSMN016-100BS,118 requires a gate voltage in order to turn on or turn off the current flow, depending on the type of signal it is receiving. The device can also be used as an amplifier if the gate voltage is strong enough to move the electrons in the channel.The device is capable of operating in both negative and positive voltage ranges, depending on the polarity of the gate. It is also resistant to damage caused by electrostatic discharge (ESD) if proper care is taken when handling it.The PSMN016-100BS,118 has a maximum drain current of 8A which makes it a good choice for higher power applications. It has a drain-source voltage of 100V, an on-resistance of 0.015 ohm, a power dissipation of 13.0 watts and a maximum junction temperature of 175°C.The working principle of the PSMN016-100BS,118 is based on the transistor effect, which states that when a voltage is applied across two different semiconductors, a charge is created that is then moved from one semiconductor (the source) to the other (the drain). The amount of current that is allowed to flow between the two is controlled by the electric field that is generated at the gate. By controlling the voltage on the gate, the circuit designer is able to control the current flow.The PSMN016-100BS,118 is an excellent choice for applications that require efficient and reliable switching or amplifying of signals. It is designed to operate reliably under conditions of high power and/or high temperature, making it a suitable choice for many different kinds of applications. The low on-resistance and high current capabilities also make it an excellent choice for applications where low power is required.

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