HAT2140H-EL-E Allicdata Electronics
Allicdata Part #:

HAT2140H-EL-E-ND

Manufacturer Part#:

HAT2140H-EL-E

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Renesas Electronics America
Short Description: MOSFET N-CH 100V 25A 5LFPAK
More Detail: N-Channel 100V 25A (Ta) 30W (Tc) Surface Mount LFP...
DataSheet: HAT2140H-EL-E datasheetHAT2140H-EL-E Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: --
Package / Case: SC-100, SOT-669
Supplier Device Package: LFPAK
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Power Dissipation (Max): 30W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 6500pF @ 10V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 105nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 16 mOhm @ 12.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The HAT2140H-EL-E is a discrete, single-channel enhancement-mode high-voltage field-effect transistor (FET). This type of FET is also known as Metal Oxide Semiconductor Field Effect Transistor (MOSFET). The device is designed to operate in the high-voltage range and is capable of performing in a wide variety of applications ranging from power switching to high-frequency communications.

The HAT2140H-EL-E is manufactured from quality materials and has a maximum drain current rating of 8 amps. The device has a threshold voltage of 12 volts and can also operate in reverse mode with a voltage of up to 35 volts. This makes it ideal for use in switching circuits, such as in high-side and low-side switches and DC-DC converters. Furthermore, the device can be used for other functions such as voltage control, cooling control, and inverter control.

The HAT2140H-EL-E can be used in various high-frequency communications applications such as high-definition radio (HD Radio) and Wi-Fi. It can also be used in RFID (radio frequency identification) and satellite applications. Additionally, it can be used in sensor systems, motor control, power management and automotive subsystems.

The HAT2140H-EL-E operates using a simple principle, which includes the application of a voltage to the gate of the device, thus allowing current to flow between the drain and the source. The amount of current that can flow is related to the voltage applied to the gate of the device, which can be used to modify the charge and current present in the device. This allows it to be used for active switching and control functions.

The high-voltage capability of the HAT2140H-EL-E allows it to perform in a wide range of applications. It is a cost-effective solution for various power switching and communications systems. The device provides robust electrical isolation, low on-resistance, low gate threshold voltage and low internal capacitance, making it an ideal solution for high-speed data transmission and switching circuits.

In summary, the HAT2140H-EL-E is an enhancement-mode high-voltage FET that is capable of performing in a wide range of applications. It is able to operate in the high-voltage range, allowing it to perform in functions such as power switching, voltage control, cooling control and inverter control. Furthermore, it is capable of performing in high-frequency communication systems, RFID and satellite applications, as well as motor control, power management and automotive subsystems. The device operates using the simple principle of applying a voltage to the gate of the device, allowing current to flow between the drain and the source.

The specific data is subject to PDF, and the above content is for reference

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