1v linear comparator - Allicdata Electronics

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Allicdata Part#	Mft.Part#	Company	Spec.	QTY.	Pricing(USD)
IXTA64N10L2-ND	IXTA64N10L2	IXYS	View more Series: Linear L2 Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 64A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 32 mOhm @ 500mA, 10V Vgs(th) (Max) @ Id: 4.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 3620pF @ 25V Power Dissipation (Max): 357W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263AA Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	117 Order	1+: $7.6797 50+: $6.2974 100+: $5.683 500+: $4.7614
SIA448DJ-T1-GE3 TR-ND	SIA448DJ-T1-GE3	Vishay Siliconix	View more Series: TrenchFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Rds On (Max) @ Id, Vgs: 15 mOhm @ 12.4A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250A Gate Charge (Qg) (Max) @ Vgs: 35nC @ 8V Vgs (Max): 8V Input Capacitance (Ciss) (Max) @ Vds: 1380pF @ 1V Power Dissipation (Max): 3.5W (Ta), 19.2W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK SC-70-6 Single Package / Case: PowerPAK SC-70-6	1000 Order	--
SSM6J511NULFTR- ND	SSM6J511NU,LF	Toshiba Semiconductor and Storage	View more Series: U-MOSVII Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25C: 14A (Ta) Rds On (Max) @ Id, Vgs: 9.1 mOhm @ 4A, 8V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 47nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 3350pF @ 6V Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-UDFNB (2x2) Package / Case: 6-WDFN Exposed Pad	6000 Order	3000+: $0.098
ZXM66N03N8DKR-N D	ZXM66N03N8TA	Diodes Incorporated	View more Packaging: Digi-Reel Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 15 mOhm @ 7.3A, 10V Vgs(th) (Max) @ Id: 1V @ 250A Vgs (Max): 20V Power Dissipation (Max): 2.5W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	1000 Order	1+: $0
IRF7809PBF-ND	IRF7809PBF	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 28V Current - Continuous Drain (Id) @ 25C: 14.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V Vgs(th) (Max) @ Id: 1V @ 250A Vgs (Max): 12V Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	1000 Order	1+: $0
IRLU9343PBF-ND	IRLU9343PBF	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25C: 20A (Tc) Rds On (Max) @ Id, Vgs: 105 mOhm @ 3.4A, 10V Vgs(th) (Max) @ Id: 1V @ 250A Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 50V Mounting Type: Through Hole Supplier Device Package: I-PAK Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	1000 Order	6525+: $0.3613
IRL5602-ND	IRL5602	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Obsolete FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Rds On (Max) @ Id, Vgs: 42 mOhm @ 12A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250A Gate Charge (Qg) (Max) @ Vgs: 44nC @ 4.5V Vgs (Max): 8V Input Capacitance (Ciss) (Max) @ Vds: 1460pF @ 15V Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	1000 Order	--
SSM3K35MFVL3F-N D	SSM3K35MFV,L3F	Toshiba Semiconductor and Storage	View more Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 180mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4V Rds On (Max) @ Id, Vgs: 3 Ohm @ 50mA, 4V Vgs(th) (Max) @ Id: 1V @ 1mA Vgs (Max): 10V Input Capacitance (Ciss) (Max) @ Vds: 9.5pF @ 3V Power Dissipation (Max): 150mW (Ta) Operating Temperature: 150C Mounting Type: Surface Mount Supplier Device Package: VESM Package / Case: SOT-723	1000 Order	1+: $0
IXTH75N10L2-ND	IXTH75N10L2	IXYS	View more Series: Linear L2 Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 21 mOhm @ 500mA, 10V Vgs(th) (Max) @ Id: 4.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 215nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 8100pF @ 25V Power Dissipation (Max): 400W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 (IXTH) Package / Case: TO-247-3	296 Order	1+: $8.2089 30+: $6.9027 120+: $6.343 510+: $5.4102
IXTT40N50L2-ND	IXTT40N50L2	IXYS	View more Series: Linear L2 Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 170 mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 4.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 320nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 10400pF @ 25V Power Dissipation (Max): 540W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-268 Package / Case: TO-268-3, DPak (2 Leads + Tab), TO-268AA	86 Order	1+: $10.4391 30+: $8.7791 120+: $8.0674
IXTT80N20L-ND	IXTT80N20L	IXYS	View more Series: Linear Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 32 mOhm @ 40A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 6160pF @ 25V Power Dissipation (Max): 520W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-268 Package / Case: TO-268-3, DPak (2 Leads + Tab), TO-268AA	1000 Order	30+: $9.0741
IXTQ60N20L2-ND	IXTQ60N20L2	IXYS	View more Series: Linear L2 Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 45 mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 4.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 255nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 10500pF @ 25V Power Dissipation (Max): 540W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3P Package / Case: TO-3P-3, SC-65-3	58 Order	1+: $9.4059 30+: $7.908 120+: $7.2668
IXTT60N20L2-ND	IXTT60N20L2	IXYS	View more Series: Linear L2 Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 45 mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 4.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 255nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 10500pF @ 25V Power Dissipation (Max): 540W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-268 Package / Case: TO-268-3, DPak (2 Leads + Tab), TO-268AA	46 Order	1+: $10.4391 30+: $8.7791 120+: $8.0674
IXTP15N50L2-ND	IXTP15N50L2	IXYS	View more Series: Linear L2 Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25C: 15A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 480 mOhm @ 7.5A, 10V Vgs(th) (Max) @ Id: 4.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 123nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 4080pF @ 25V Power Dissipation (Max): 300W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	66 Order	1+: $4.9455 50+: $4.0547 100+: $3.6591 500+: $3.0657 1000+: $2.6702
IXTN110N20L2-ND	IXTN110N20L2	IXYS	View more Series: Linear L2 Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 24 mOhm @ 55A, 10V Vgs(th) (Max) @ Id: 4.5V @ 3mA Gate Charge (Qg) (Max) @ Vgs: 500nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 23000pF @ 25V Power Dissipation (Max): 735W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227B Package / Case: SOT-227-4, miniBLOC	1000 Order	10+: $25.0639
IXTH110N10L2-ND	IXTH110N10L2	IXYS	View more Series: Linear L2 Packaging: Bulk Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 110A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 18 mOhm @ 500mA, 10V Vgs(th) (Max) @ Id: 4.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 10500pF @ 25V Power Dissipation (Max): 600W (Tc) Mounting Type: Through Hole Supplier Device Package: TO-247 (IXTH) Package / Case: TO-247-3	1510 Order	--
IXTT75N10L2-ND	IXTT75N10L2	IXYS	View more Series: Linear L2 Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 21 mOhm @ 500mA, 10V Vgs(th) (Max) @ Id: 4.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 215nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 8100pF @ 25V Power Dissipation (Max): 400W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-268 Package / Case: TO-268-3, DPak (2 Leads + Tab), TO-268AA	116 Order	1+: $8.8452 30+: $7.4388 120+: $6.8357 510+: $5.8304
IXTQ40N50L2-ND	IXTQ40N50L2	IXYS	View more Series: Linear L2 Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 170 mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 4.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 320nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 10400pF @ 25V Power Dissipation (Max): 540W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3P Package / Case: TO-3P-3, SC-65-3	30 Order	1+: $9.4059 30+: $7.908
IXTX90N25L2-ND	IXTX90N25L2	IXYS	View more Series: Linear L2 Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25C: 90A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 33 mOhm @ 45A, 10V Vgs(th) (Max) @ Id: 4.5V @ 3mA Gate Charge (Qg) (Max) @ Vgs: 640nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 23000pF @ 25V Power Dissipation (Max): 960W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS247-3 Package / Case: TO-247-3	240 Order	1+: $18.4779 30+: $15.7036 120+: $14.595
IXTH60N20L2-ND	IXTH60N20L2	IXYS	View more Series: Linear L2 Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 45 mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 4.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 255nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 10500pF @ 25V Power Dissipation (Max): 540W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 (IXTH) Package / Case: TO-247-3	29 Order	1+: $9.8028 30+: $8.2429 120+: $7.5746
IXTX60N50L2-ND	IXTX60N50L2	IXYS	View more Series: Linear L2 Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 100 mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 4.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 610nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 24000pF @ 25V Power Dissipation (Max): 960W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS247-3 Package / Case: TO-247-3	200 Order	1+: $18.4779 30+: $15.7036 120+: $14.595
IXTK240N075L2-N D	IXTK240N075L2	IXYS	View more Series: Linear L2 Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25C: 240A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 7 mOhm @ 120A, 10V Vgs(th) (Max) @ Id: 4.5V @ 3mA Gate Charge (Qg) (Max) @ Vgs: 546nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 19000pF @ 25V Power Dissipation (Max): 960W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-264 Package / Case: TO-264-3, TO-264AA	1000 Order	25+: $15.3586
IXTK110N20L2-ND	IXTK110N20L2	IXYS	View more Series: Linear L2 Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25C: 110A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 24 mOhm @ 55A, 10V Vgs(th) (Max) @ Id: 4.5V @ 3mA Gate Charge (Qg) (Max) @ Vgs: 500nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 23000pF @ 25V Power Dissipation (Max): 960W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-264 (IXTK) Package / Case: TO-264-3, TO-264AA	26 Order	1+: $18.6228 25+: $15.8266 100+: $14.7095
IXTH80N075L2-ND	IXTH80N075L2	IXYS	View more Series: Linear L2 Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 24 mOhm @ 40A, 10V Vgs(th) (Max) @ Id: 4.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 103nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 25V Power Dissipation (Max): 357W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	1000 Order	30+: $4.0427
IXTH140N075L2-N D	IXTH140N075L2	IXYS	View more Series: Linear L2 Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25C: 140A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 11 mOhm @ 70A, 10V Vgs(th) (Max) @ Id: 4.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 275nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 9300pF @ 25V Power Dissipation (Max): 540W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	1000 Order	30+: $10.8165
IXTX200N10L2-ND	IXTX200N10L2	IXYS	View more Series: Linear L2 Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 200A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 11 mOhm @ 100A, 10V Vgs(th) (Max) @ Id: 4.5V @ 3mA Gate Charge (Qg) (Max) @ Vgs: 540nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 23000pF @ 25V Power Dissipation (Max): 1040W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS247-3 Package / Case: TO-247-3	1000 Order	30+: $14.7552
IXTK60N50L2-ND	IXTK60N50L2	IXYS	View more Series: Linear L2 Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 100 mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 4.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 610nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 24000pF @ 25V Power Dissipation (Max): 960W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-264 (IXTK) Package / Case: TO-264-3, TO-264AA	1288 Order	1+: $18.6228 10+: $17.2229 100+: $14.7095
IXTT30N50L2-ND	IXTT30N50L2	IXYS	View more Series: Linear L2 Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 200 mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 4.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 240nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 8100pF @ 25V Power Dissipation (Max): 400W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-268 Package / Case: TO-268-3, DPak (2 Leads + Tab), TO-268AA	3 Order	1+: $8.8452 30+: $7.4388 120+: $6.8357 510+: $5.8304
IXTK200N10L2-ND	IXTK200N10L2	IXYS	View more Series: Linear L2 Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 200A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 11 mOhm @ 100A, 10V Vgs(th) (Max) @ Id: 4.5V @ 3mA Gate Charge (Qg) (Max) @ Vgs: 540nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 23000pF @ 25V Power Dissipation (Max): 1040W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-264 (IXTK) Package / Case: TO-264-3, TO-264AA	253 Order	--
IXTT110N10L2-ND	IXTT110N10L2	IXYS	View more Series: Linear L2 Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 110A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 18 mOhm @ 55A, 10V Vgs(th) (Max) @ Id: 4.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 10500pF @ 25V Power Dissipation (Max): 600W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-268 Package / Case: TO-268-3, DPak (2 Leads + Tab), TO-268AA	84 Order	--
IXTH2N150L-ND	IXTH2N150L	IXYS	View more Series: Linear L2 Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1500V Current - Continuous Drain (Id) @ 25C: 2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 20V Rds On (Max) @ Id, Vgs: 15 Ohm @ 1A, 20V Vgs(th) (Max) @ Id: 8.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 72nC @ 20V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 1470pF @ 25V Power Dissipation (Max): 290W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	1000 Order	30+: $6.5944
IXTX110N20L2-ND	IXTX110N20L2	IXYS	View more Series: Linear L2 Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25C: 110A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 24 mOhm @ 55A, 10V Vgs(th) (Max) @ Id: 4.5V @ 3mA Gate Charge (Qg) (Max) @ Vgs: 500nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 23000pF @ 25V Power Dissipation (Max): 960W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS247-3 Package / Case: TO-247-3	13 Order	1+: $18.4779 30+: $15.7036 120+: $14.595
IXTQ30N50L2-ND	IXTQ30N50L2	IXYS	View more Series: Linear L2 Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 200 mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 4.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 240nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 8100pF @ 25V Power Dissipation (Max): 400W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3P Package / Case: TO-3P-3, SC-65-3	1000 Order	30+: $7.2776
IXTK90N25L2-ND	IXTK90N25L2	IXYS	View more Series: Linear L2 Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25C: 90A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 33 mOhm @ 45A, 10V Vgs(th) (Max) @ Id: 4.5V @ 3mA Gate Charge (Qg) (Max) @ Vgs: 640nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 23000pF @ 25V Power Dissipation (Max): 960W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-264 (IXTK) Package / Case: TO-264-3, TO-264AA	237 Order	--
IXTX240N075L2-N D	IXTX240N075L2	IXYS	View more Series: Linear L2 Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25C: 240A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 7 mOhm @ 120A, 10V Vgs(th) (Max) @ Id: 4.5V @ 3mA Gate Charge (Qg) (Max) @ Vgs: 546nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 19000pF @ 25V Power Dissipation (Max): 960W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS247-3 Package / Case: TO-247-3	1000 Order	30+: $15.1861
IXTQ30N60L2-ND	IXTQ30N60L2	IXYS	View more Series: Linear L2 Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 240 mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 4.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 335nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 10700pF @ 25V Power Dissipation (Max): 540W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3P Package / Case: TO-3P-3, SC-65-3	1000 Order	30+: $7.908
IXTP80N075L2-ND	IXTP80N075L2	IXYS	View more Series: Linear L2 Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 24 mOhm @ 40A, 10V Vgs(th) (Max) @ Id: 4.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 103nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 25V Power Dissipation (Max): 357W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	53 Order	1+: $4.221 50+: $3.3907 100+: $3.0893 500+: $2.5016 1000+: $2.1097
IXTT30N60L2-ND	IXTT30N60L2	IXYS	View more Series: Linear L2 Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 240 mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 4.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 335nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 10700pF @ 25V Power Dissipation (Max): 540W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-268 Package / Case: TO-268-3, DPak (2 Leads + Tab), TO-268AA	309 Order	1+: $10.4391 30+: $8.7791 120+: $8.0674
IXTH80N20L-ND	IXTH80N20L	IXYS	View more Series: Linear Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 32 mOhm @ 40A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 6160pF @ 25V Power Dissipation (Max): 520W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 (IXTH) Package / Case: TO-247-3	42 Order	1+: $8.3853 30+: $6.8766
IXTH30N50L2-ND	IXTH30N50L2	IXYS	View more Series: Linear L2 Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 200 mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 4.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 240nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 8100pF @ 25V Power Dissipation (Max): 400W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 (IXTH) Package / Case: TO-247-3	23 Order	1+: $8.2089 30+: $6.9027 120+: $6.343 510+: $5.4102

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