SIA448DJ-T1-GE3 Allicdata Electronics
Allicdata Part #:

SIA448DJ-T1-GE3TR-ND

Manufacturer Part#:

SIA448DJ-T1-GE3

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 20V 12A SC70-6L
More Detail: N-Channel 20V 12A (Tc) 3.5W (Ta), 19.2W (Tc) Surfa...
DataSheet: SIA448DJ-T1-GE3 datasheetSIA448DJ-T1-GE3 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 1V @ 250µA
Package / Case: PowerPAK® SC-70-6
Supplier Device Package: PowerPAK® SC-70-6 Single
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.5W (Ta), 19.2W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1380pF @ 1V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 8V
Series: TrenchFET®
Rds On (Max) @ Id, Vgs: 15 mOhm @ 12.4A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The SIA448DJ-T1-GE3 is a two-terminal, surface-mount N-Channel Switch IC device from Toshiba Semiconductor. The device is widely used in high-current switching applications such as power supplies and motor control. This article will discuss the application field and working principle of the SIA448DJ-T1-GE3.The SIA448DJ-T1-GE3 is a metal-oxide semiconductor field-effect transistor (MOSFET). It is a type of voltage-controlled field-effect transistor (FET) used as a switch to control a large current to an electrical load. The device is typically operated with a voltage between its drain and source of 8V-18V. It is also able to control current up to a maximum value of 10A.Due to its high switching speed and wide operating voltage range, this device is suitable for a wide range of applications. It is commonly found in DC-DC power converters, motor control systems, switch-mode power supplies, and lighting applications. The device can also be used in low-power analog circuits such as digital-to-analog converters.The working principle of the SIA448DJ-T1-GE3 is based on the basic principles of the field-effect transistor. In this device, the gate terminal is connected to a voltage source and the drain and source terminals are connected to the load. When a voltage is applied to the gate terminal, it induces an electric field in the channels between the drain and source terminals. This electric field affects the electrical characteristics of the device such as the resistance between the drain and source terminals. The SIA448DJ-T1-GE3 is designed with a low ON resistance and a high drive capability to enable efficient switching performance. It also has a very small package size and excellent thermal characteristics for use in a wide range of applications. With a maximum drain current of 10A, this device is ideal for applications where a high-current switch is required.In conclusion, the SIA448DJ-T1-GE3 is a versatile two-terminal N-channel switch device suitable for a wide range of applications. It can be used in power supplies and motor control systems due to its high switching speed and low ON resistance. The device has a wide operating voltage range and a high current drive capability, making it an ideal switch for high-current applications.

The specific data is subject to PDF, and the above content is for reference

Related Products
Search Part number : "SIA4" Included word is 40
Part Number Manufacturer Price Quantity Description
SIA443DJ-T1-GE3 Vishay Silic... -- 1000 MOSFET P-CH 20V 9A SC70-6...
SIA450DJ-T1-GE3 Vishay Silic... -- 1000 MOSFET N-CH 240V 1.52A SC...
SIA417DJ-T1-GE3 Vishay Silic... -- 1000 MOSFET P-CH 8V 12A SC70-6...
SIA419DJ-T1-GE3 Vishay Silic... -- 1000 MOSFET P-CH 20V 12A SC70-...
SIA411DJ-T1-GE3 Vishay Silic... 0.0 $ 1000 MOSFET P-CH 20V 12A SC70-...
SIA408DJ-T1-GE3 Vishay Silic... -- 3000 MOSFET N-CH 30V 4.5A SC70...
SIA462DJ-T1-GE3 Vishay Silic... -- 3000 MOSFET N-CH 30V 12A SC-70...
SIA477EDJ-T1-GE3 Vishay Silic... 0.14 $ 1000 MOSFET P-CH 12V 12A SC-70...
SIA411DJ-T1-E3 Vishay Silic... 0.0 $ 1000 MOSFET P-CH 20V 12A SC70-...
SIA443DJ-T1-E3 Vishay Silic... 0.0 $ 1000 MOSFET P-CH 20V 9A SC70-6...
SIA450DJ-T1-E3 Vishay Silic... 0.0 $ 1000 MOSFET N-CH 240V 1.52A SC...
SIA468DJ-T1-GE3 Vishay Silic... 0.18 $ 1000 MOSFET N-CH 30V 37.8A SC7...
SIA416DJ-T1-GE3 Vishay Silic... 0.21 $ 1000 MOSFET N-CH 100V 11.3A SC...
SIA465EDJ-T1-GE3 Vishay Silic... 0.12 $ 1000 MOSFET P-CH 20V 12A SC70-...
SIA472EDJ-T1-GE3 Vishay Silic... 0.12 $ 1000 MOSFET N-CH 30V 12A SC70-...
SIA445EDJT-T1-GE3 Vishay Silic... 0.13 $ 1000 MOSFET P-CH 20V 12A SC70-...
SIA448DJ-T1-GE3 Vishay Silic... -- 1000 MOSFET N-CH 20V 12A SC70-...
SIA445EDJ-T1-GE3 Vishay Silic... -- 1000 MOSFET P-CH 20V 12A SC-70...
SIA437DJ-T1-GE3 Vishay Silic... -- 1000 MOSFET P-CH 20V 29.7A SC7...
SIA433EDJ-T1-GE3 Vishay Silic... -- 12000 MOSFET P-CH 20V 12A SC-70...
SIA425EDJ-T1-GE3 Vishay Silic... -- 1000 MOSFET P-CH 20V 4.5A SC-7...
SIA431DJ-T1-GE3 Vishay Silic... -- 1000 MOSFET P-CH 20V 12A PPAK ...
SIA469DJ-T1-GE3 Vishay Silic... 0.11 $ 3000 MOSFET P-CHANNEL 30V 12A ...
SIA477EDJT-T1-GE3 Vishay Silic... 0.13 $ 1000 MOSFET P-CH 12V 12A SC70-...
SIA446DJ-T1-GE3 Vishay Silic... 0.19 $ 1000 MOSFET N-CH 150V 7.7A SC7...
SIA466EDJ-T1-GE3 Vishay Silic... -- 1000 MOSFET N-CH 20V 25A SC-70...
SIA432DJ-T1-GE3 Vishay Silic... -- 1000 MOSFET N-CH 30V 12A SC70-...
SIA427ADJ-T1-GE3 Vishay Silic... 0.15 $ 1000 MOSFET P-CH 8V 12A 6SC-70...
SIA485DJ-T1-GE3 Vishay Silic... -- 1000 MOSFET P-CHANNEL 150V 1.6...
SIA467EDJ-T1-GE3 Vishay Silic... 0.18 $ 1000 MOSFET P-CH 12V 31A SC70-...
SIA415DJ-T1-GE3 Vishay Silic... -- 9000 MOSFET P-CH 20V 12A SC70-...
SIA461DJ-T1-GE3 Vishay Silic... -- 1000 MOSFET P-CH 20V 12A SC70-...
SIA418DJ-T1-GE3 Vishay Silic... -- 1000 MOSFET N-CH 30V 12A SC70-...
SIA406DJ-T1-GE3 Vishay Silic... -- 1000 MOSFET N-CH 12V 4.5A SC-7...
SIA440DJ-T1-GE3 Vishay Silic... -- 1000 MOSFET N-CH 40V 12A SC-70...
SIA438EDJ-T1-GE3 Vishay Silic... 0.16 $ 1000 MOSFET N-CH 20V 6A PPAK S...
SIA439EDJ-T1-GE3 Vishay Silic... -- 1000 MOSFET P-CH 20V 28A SC-70...
SIA413ADJ-T1-GE3 Vishay Silic... -- 1000 MOSFET P-CH 12V 12A SC70-...
SIA430DJT-T1-GE3 Vishay Silic... 0.14 $ 1000 MOSFET N-CH 20V 12A SC70-...
SIA483DJ-T1-GE3 Vishay Silic... -- 75000 MOSFET P-CH 30V 12A SC70-...
Latest Products
IRFL31N20D

MOSFET N-CH 200V 31A D2PAKN-Channel 200V...

IRFL31N20D Allicdata Electronics
IXTT440N055T2

MOSFET N-CH 55V 440A TO-268N-Channel 55V...

IXTT440N055T2 Allicdata Electronics
IXTH14N80

MOSFET N-CH 800V 14A TO-247N-Channel 800...

IXTH14N80 Allicdata Electronics
IXFT23N60Q

MOSFET N-CH 600V 23A TO-268(D3)N-Channel...

IXFT23N60Q Allicdata Electronics
IXTT72N20

MOSFET N-CH 200V 72A TO-268N-Channel 200...

IXTT72N20 Allicdata Electronics
IXFT9N80Q

MOSFET N-CH 800V 9A TO-268N-Channel 800V...

IXFT9N80Q Allicdata Electronics