Allicdata Part #: | SIA448DJ-T1-GE3TR-ND |
Manufacturer Part#: |
SIA448DJ-T1-GE3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 20V 12A SC70-6L |
More Detail: | N-Channel 20V 12A (Tc) 3.5W (Ta), 19.2W (Tc) Surfa... |
DataSheet: | SIA448DJ-T1-GE3 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Package / Case: | PowerPAK® SC-70-6 |
Supplier Device Package: | PowerPAK® SC-70-6 Single |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 3.5W (Ta), 19.2W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1380pF @ 1V |
Vgs (Max): | ±8V |
Gate Charge (Qg) (Max) @ Vgs: | 35nC @ 8V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 15 mOhm @ 12.4A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 1.5V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 12A (Tc) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The SIA448DJ-T1-GE3 is a two-terminal, surface-mount N-Channel Switch IC device from Toshiba Semiconductor. The device is widely used in high-current switching applications such as power supplies and motor control. This article will discuss the application field and working principle of the SIA448DJ-T1-GE3.The SIA448DJ-T1-GE3 is a metal-oxide semiconductor field-effect transistor (MOSFET). It is a type of voltage-controlled field-effect transistor (FET) used as a switch to control a large current to an electrical load. The device is typically operated with a voltage between its drain and source of 8V-18V. It is also able to control current up to a maximum value of 10A.Due to its high switching speed and wide operating voltage range, this device is suitable for a wide range of applications. It is commonly found in DC-DC power converters, motor control systems, switch-mode power supplies, and lighting applications. The device can also be used in low-power analog circuits such as digital-to-analog converters.The working principle of the SIA448DJ-T1-GE3 is based on the basic principles of the field-effect transistor. In this device, the gate terminal is connected to a voltage source and the drain and source terminals are connected to the load. When a voltage is applied to the gate terminal, it induces an electric field in the channels between the drain and source terminals. This electric field affects the electrical characteristics of the device such as the resistance between the drain and source terminals. The SIA448DJ-T1-GE3 is designed with a low ON resistance and a high drive capability to enable efficient switching performance. It also has a very small package size and excellent thermal characteristics for use in a wide range of applications. With a maximum drain current of 10A, this device is ideal for applications where a high-current switch is required.In conclusion, the SIA448DJ-T1-GE3 is a versatile two-terminal N-channel switch device suitable for a wide range of applications. It can be used in power supplies and motor control systems due to its high switching speed and low ON resistance. The device has a wide operating voltage range and a high current drive capability, making it an ideal switch for high-current applications.
The specific data is subject to PDF, and the above content is for reference
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