IXTH140N075L2

Gate Charge (Qg) (Max) @ Vgs:	275nC @ 10V
Package / Case:	TO-247-3
Supplier Device Package:	TO-247
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	540W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	9300pF @ 25V
Vgs (Max):	±20V
Series:	Linear L2™
Vgs(th) (Max) @ Id:	4.5V @ 250µA
Rds On (Max) @ Id, Vgs:	11 mOhm @ 70A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	140A (Tc)
Drain to Source Voltage (Vdss):	75V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active

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The IXTH140N075L2 is a high-voltage N-Channel, 1.6mΩ, logic level field-effect transistor (MOSFET). The IXTH140N075L2 is designed to use as a power switch, primarily in surface-mount applications. The low on-resistance is achieved with a special design which allows for an equivalent substrate doping as high as 7.5 ohms. This low on-resistance allows the IXTH140N075L2 to switch large amounts of power in a more efficient manner than other power MOSFETs. The IXTH140N075L2 has a breakdown voltage of 200V, a maximum current rating of 187A, and a maximum power dissipation of 1796W. It has a maximum operating temperature of 150°C and a maximum drain source voltage of 30V. The IXTH140N075L2 also features a logic level gate drive that allows for easy switching of the device with simpler control circuitry. The IXTH140N075L2 is typically used in applications such as LED lighting control, motor control, solenoid control, and power supply design. It is also used in a variety of other applications such as industrial control systems, automotive HVAC systems, and power distribution networks. The IXTH140N075L2 operates using an enhancement-mode enhancement–mode depletion-mode (EDL) MOSFET switch. In an EDL MOSFET, the channel region is either positively biased or negatively biased depending on the applied gate voltage. When the gate voltage is sufficiently high and a positive bias is applied to the channel region, the transistor is switched on, allowing electric current to flow between the drain and the source. When the gate voltage is sufficiently low and a negative bias is applied to the channel region, the transistor is switched off, reducing or blocking current flow between the drain and the source. The IXTH140N075L2 has a wide range of features and benefits which make it a great choice for a variety of applications. Its low on-resistance and large drain-source voltage provide increased efficiency and power efficiency compared to other devices. It also allows for greater flexibility in circuit design, as the device is characterized by a wide temperature operating range and a low gate threshold voltage. The low gate threshold voltage also allows for easier device switching. In conclusion, the IXTH140N075L2 is an excellent choice in power switch applications. With its low on-resistance, wide temperature operating range, and low gate threshold voltage, the IXTH140N075L2 is the ideal choice for a variety of power management applications. This device is particularly well-suited for applications requiring very high efficiency and power density.

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