Allicdata Part #: | IXTK200N10L2-ND |
Manufacturer Part#: |
IXTK200N10L2 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 100V 200A TO-264 |
More Detail: | N-Channel 100V 200A (Tc) 1040W (Tc) Through Hole T... |
DataSheet: | IXTK200N10L2 Datasheet/PDF |
Quantity: | 253 |
Specifications
Vgs(th) (Max) @ Id: | 4.5V @ 3mA |
Package / Case: | TO-264-3, TO-264AA |
Supplier Device Package: | TO-264 (IXTK) |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1040W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 23000pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 540nC @ 10V |
Series: | Linear L2™ |
Rds On (Max) @ Id, Vgs: | 11 mOhm @ 100A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 200A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
Description
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IXTK200N10L2 Application Field and Working PrincipleThe IXTK200N10L2 is a type of field effect transistor (FET), more accurately known as a metal-oxide-semiconductor field effect transistor (MOSFET). It is a power component commonly used in semiconductor applications. It is a single component that has three terminals namely gate, source and drain, with the gate being the control terminal. MOSFETs have wide application in both analog and digital circuits, and are used to amplify or switch electrical signals. This IXTK200N10L2 MOSFET belongs to the extended family of DMOSFET (with depletion-mode) transistors in the 2 to 100A range (2 to 8A for this particular MOSFET). This type of MOSFET is suitable for low voltage applications, typically within installation equipment, appliances, automotive and industrial indoor/outdoor applications. MOSFETs operate on a principle similar to an electrolytic cell. When the gate terminal is connected to a terminal with a positive charge, an electric field is generated that helps in attracting and trapping electrons inside the channel formed between the source and the drain. On the other hand, when the gate terminal is connected to a terminal with a negative charge, the electric field helps repel the electrons away from the semiconductor channel and the transistor then remains in a non-conducting state. This action is called field-effect modulation and is responsible for the switching or controlling of thegate terminal in a MOSFET. The IXTK200N10L2 device has been specifically designed as an optimal solution for the various switching and protection functions in circuit designs. It allows for the control of high power applications using minimal power source. Its low gate-charge device provides fast switching capabilities with a guaranteed maximum ON-resistance of 500mΩ, keeping the power losses to a minimum. Its body has dimensions of 52.02×7.11×3.92mm, its total thermal resistance is 35K/W, ensuring a fast and efficient heat dissipation and its gate electrode insulation withstands voltages of up to 800V. The IXTK200N10L2 device saves precious board space due to its small packaging, affording more compact designs for more adventurous creators. Furthermore, the IXTK200N10L2 has a good immunity to fast transients because of its low contact inductance. The N-channel device is also protected against electrostatic discharge (ESD) and its low gate-threshold voltage allows operation at a very low drain current. It works best as a switch, controlling the current flowing through a circuit. Furthermore, it can also be used as an amplifier, by controlling the voltage of the drain terminal using the source-gate voltage. As the gate is connected to the source, it works as an installed capacitor, so the device can be used as a capacitor voltage multiplier, often in amplifier stages to generate polarity switches, frequency multipliers, and harmonics. In conclusion, the IXTK200N10L2 MOSFET is a remarkable marvel of modern technology and it has opened up new possibilities in the arena of circuit design. It is widely used in the majority of semiconductor applications, including power switching and control, protection and various other analog and digital circuits. It gives the user similar controllability as a P-channel device, with the advantage of higher current capability with higher efficiency, as well as a wide range of unique application possibilities.The specific data is subject to PDF, and the above content is for reference
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