IXTK110N20L2

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IXTK110N20L2 is a TRANSFET, a Metal Oxide Semiconductor Field Effect Transistor (MOSFET) designed for a variety of device configurations, including single, dual and multiple source and sourceless configurations.

The IXTK110N20L2 utilizes the construction of a Single MOSFET, which allows for easy implementation into specific application. It is composed of a single n-channel enhancement MOSFET, and is available in both pin-to-pin compatible, and non-pin-to-pin compatible packages. The device is packaged in low–profile, hermetically sealed, surface mountable packages, providing excellent performance in automotive, medical, industrial, and consumer applications.

The IXTK110N20L2 has been primarily designed for applications that require high-temperature operation, high-speed switching, low-on-resistance, and low capacitance.

The device has a maximum collector current of 2A, with a minimum gate-source breakout voltage of 4V. It also has an operating temperature range from -55°C to 150°C, with a maximum tolerance temperature range of -65°C~175°C. It also has a maximum power dissipation of 25W in an ambient temperature of 25°C. These features provide for a wide range of applications in motor control and other high-temperature applications.

The IXTK110N20L2’s working principle revolves around the idea of controlling the current that flows between source and drain within the device. The transistor is composed of a gate, drain and source, which form the basis of a field effect transistor. When the gate is biased, it affects the width of a conducting channel between the source and drain. This channel allows electrons to flow from source to drain, thus controlling the current through the device. This makes it ideal for applications requiring precise current control, such as motor control.

The IXTK110N20L2 also has many other features that make it well adapted for applications. For instance, its low-on-resistance of 2Ωmax makes it suitable for switching applications that require low on-resistance, while its high temperature operation ensures that it can safely be used in environments where temperature control is a major factor. Furthermore, its low capacitance of 45.0pF ensures that it has minimal impact on signal integrity.

In conclusion, the IXTK110N20L2 is a robust MOSFET device that can be easily implemented into numerous applications that require high-temperature operation, high-speed switching, low-on-resistance and low capacitance. Its wide range of features make it an ideal choice for motor control applications and other high-temperature applications that require precise current control.

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