IXTQ30N60L2 Allicdata Electronics
Allicdata Part #:

IXTQ30N60L2-ND

Manufacturer Part#:

IXTQ30N60L2

Price: $ 8.79
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 600V 30A TO-3P
More Detail: N-Channel 600V 30A (Tc) 540W (Tc) Through Hole TO-...
DataSheet: IXTQ30N60L2 datasheetIXTQ30N60L2 Datasheet/PDF
Quantity: 1000
30 +: $ 7.90797
Stock 1000Can Ship Immediately
$ 8.79
Specifications
Series: Linear L2™
Packaging: Tube 
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 240 mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 335nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 10700pF @ 25V
FET Feature: --
Power Dissipation (Max): 540W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-3P
Package / Case: TO-3P-3, SC-65-3
Description

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The IXTQ30N60L2 is a high-voltage, high-density, low-on-resistance MOSFET. It is a through-hole device that is designed to provide superior levels of efficiency, heat dissipation, and protection against overloads. This makes it a popular choice for applications requiring high power switching and/or scalability.

The IXTQ30N60L2 is a single enhancement mode (E-mode) MOSFET. It is a three-terminal device composed of a Gate, Drain, and Source. The E-mode MOSFET is a four-layer device. The Gate is composed of two metal-oxide semiconductor layers, while the Drain and Source are composed of two metal layers. These four layers are the active components of the MOSFET and constitute the device’s capacitance.

The IXTQ30N60L2 has a maximum drain-source breakdown voltage of 600V and a maximum drain current of 30A. Its on-resistance is only 0.136mΩ and its thermal resistance is 0.76°C/W. In addition, the device is capable of operating at temperatures ranging from -55°C to 175°C. The IXTQ30N60L2 can be used as either a direct switch, for user-controlled switching applications, or as a current-limiting element.

The IXTQ30N60L2 is suitable for a wide range of applications. These include power management, motor control, voltage regulation, lighting, audio amplification, and industrial automation. It is also commonly used in automotive and marine electronics. Additionally, this MOSFET can be used in high-power applications, such assolar panels, wind turbines, and cordless power tools.

The IXTQ30N60L2 is an ideal choice for applications requiring high power switching and reliable performance. Its small physical size and low power dissipation make it an attractive option for reducing board space and improving efficiency. Its low resistance and wide operating temperature range make it suitable for a variety of applications.

In summary, the IXTQ30N60L2 is a high voltage, high-density, low-on-resistance MOSFET. Its single enhancement mode design and four-layer structure allow for superior levels of efficiency and heat dissipation. The maximum drain-source breakdown voltage of 600V and maximum drain current of 30A make it suitable for a wide range of applications, from power management to industrial automation. The low resistance, wide temperature range, and small size make it an excellent option for applications requiring high power switching and reliable performance.

The specific data is subject to PDF, and the above content is for reference

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