| Allicdata Part #: | IXTQ30N60L2-ND |
| Manufacturer Part#: |
IXTQ30N60L2 |
| Price: | $ 8.79 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | IXYS |
| Short Description: | MOSFET N-CH 600V 30A TO-3P |
| More Detail: | N-Channel 600V 30A (Tc) 540W (Tc) Through Hole TO-... |
| DataSheet: |  IXTQ30N60L2 Datasheet/PDF |
| Quantity: | 1000 |
| 30 +: | $ 7.90797 |
| Vgs(th) (Max) @ Id: | 4.5V @ 250µA |
| Package / Case: | TO-3P-3, SC-65-3 |
| Supplier Device Package: | TO-3P |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 540W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 10700pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 335nC @ 10V |
| Series: | Linear L2™ |
| Rds On (Max) @ Id, Vgs: | 240 mOhm @ 15A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 30A (Tc) |
| Drain to Source Voltage (Vdss): | 600V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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The IXTQ30N60L2 is a high-voltage, high-density, low-on-resistance MOSFET. It is a through-hole device that is designed to provide superior levels of efficiency, heat dissipation, and protection against overloads. This makes it a popular choice for applications requiring high power switching and/or scalability.
The IXTQ30N60L2 is a single enhancement mode (E-mode) MOSFET. It is a three-terminal device composed of a Gate, Drain, and Source. The E-mode MOSFET is a four-layer device. The Gate is composed of two metal-oxide semiconductor layers, while the Drain and Source are composed of two metal layers. These four layers are the active components of the MOSFET and constitute the device’s capacitance.
The IXTQ30N60L2 has a maximum drain-source breakdown voltage of 600V and a maximum drain current of 30A. Its on-resistance is only 0.136mΩ and its thermal resistance is 0.76°C/W. In addition, the device is capable of operating at temperatures ranging from -55°C to 175°C. The IXTQ30N60L2 can be used as either a direct switch, for user-controlled switching applications, or as a current-limiting element.
The IXTQ30N60L2 is suitable for a wide range of applications. These include power management, motor control, voltage regulation, lighting, audio amplification, and industrial automation. It is also commonly used in automotive and marine electronics. Additionally, this MOSFET can be used in high-power applications, such assolar panels, wind turbines, and cordless power tools.
The IXTQ30N60L2 is an ideal choice for applications requiring high power switching and reliable performance. Its small physical size and low power dissipation make it an attractive option for reducing board space and improving efficiency. Its low resistance and wide operating temperature range make it suitable for a variety of applications.
In summary, the IXTQ30N60L2 is a high voltage, high-density, low-on-resistance MOSFET. Its single enhancement mode design and four-layer structure allow for superior levels of efficiency and heat dissipation. The maximum drain-source breakdown voltage of 600V and maximum drain current of 30A make it suitable for a wide range of applications, from power management to industrial automation. The low resistance, wide temperature range, and small size make it an excellent option for applications requiring high power switching and reliable performance.
The specific data is subject to PDF, and the above content is for reference
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